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Ju JH, Jang SK, Son H, et al. High performance bi-layer atomic switching devices. Nanoscale. 2017;9(24):8373-8379doi: 10.1039/c7nr01035d.
Ju, J. H., Jang, S. K., Son, H., Park, J. H., & Lee, S. (2017). High performance bi-layer atomic switching devices. Nanoscale, 9(24), 8373-8379. https://doi.org/10.1039/c7nr01035d
Ju, Jae Hyeok, et al. "High performance bi-layer atomic switching devices." Nanoscale vol. 9,24 (2017): 8373-8379. doi: https://doi.org/10.1039/c7nr01035d
Ju JH, Jang SK, Son H, Park JH, Lee S. High performance bi-layer atomic switching devices. Nanoscale. 2017 Jun 22;9(24):8373-8379. doi: 10.1039/c7nr01035d. PMID: 28594423.
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Nanoscale. 2017 Jun 22;9(24):8373-8379. doi: 10.1039/c7nr01035d.

High performance bi-layer atomic switching devices.

Nanoscale

Jae Hyeok Ju, Sung Kyu Jang, Hyeonje Son, Jin-Hong Park, Sungjoo Lee

Affiliations

  1. SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SSKU), Suwon 440-746, Korea.

PMID: 28594423 DOI: 10.1039/c7nr01035d

Abstract

Atomic switches, also known as conductive bridging random access memory devices, are resistive-switching devices that utilize the electrochemical reactions within a solid electrolyte between metal electrodes, and are considered essential components of future information storage and logic building blocks. In spite of their advantages as next generation switching components such as high density, large scalability, and low power consumption, the large deviations in their electrical properties and the instability of their switching behaviors hinder their application in information processing systems. Here, we report the fabrication of a uniform, low-power atomic switch with a bi-layer structure consisting of Ta

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