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Zhang L, Wu M, Chen X, et al. Nanoscale distribution of Bi atoms in InP. Sci Rep. 2017;7(1):12278doi: 10.1038/s41598-017-12075-2.
Zhang, L., Wu, M., Chen, X., Wu, X., Spiecker, E., Song, Y., Pan, W., Li, Y., Yue, L., Shao, J., & Wang, S. (2017). Nanoscale distribution of Bi atoms in InP. Scientific reports, 7(1), 12278. https://doi.org/10.1038/s41598-017-12075-2
Zhang, Liyao, et al. "Nanoscale distribution of Bi atoms in InP." Scientific reports vol. 7,1 (2017): 12278. doi: https://doi.org/10.1038/s41598-017-12075-2
Zhang L, Wu M, Chen X, Wu X, Spiecker E, Song Y, Pan W, Li Y, Yue L, Shao J, Wang S. Nanoscale distribution of Bi atoms in InP. Sci Rep. 2017 Sep 25;7(1):12278. doi: 10.1038/s41598-017-12075-2. PMID: 28947809; PMCID: PMC5612989.
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Sci Rep. 2017 Sep 25;7(1):12278. doi: 10.1038/s41598-017-12075-2.

Nanoscale distribution of Bi atoms in InP.

Scientific reports

Liyao Zhang, Mingjian Wu, Xiren Chen, Xiaoyan Wu, Erdmann Spiecker, Yuxin Song, Wenwu Pan, Yaoyao Li, Li Yue, Jun Shao, Shumin Wang

Affiliations

  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai, 200050, China.
  2. Institute of Micro- and Nanostructure Research & Center for Nanoanalysis and Electron Microscopy (CENEM), Department of Materials Science, Universität Erlangen-Nürnberg, Cauerstraße 6, D-91058, Erlangen, Germany.
  3. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin, Germany.
  4. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, CAS, 500 Yutian Road, Shanghai, 200083, China.
  5. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai, 200050, China. [email protected].
  6. Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296, Gothenburg, Sweden. [email protected].

PMID: 28947809 PMCID: PMC5612989 DOI: 10.1038/s41598-017-12075-2

Abstract

The nanoscale distribution of Bi in InPBi is determined by atom probe tomography and transmission electron microscopy. The distribution of Bi atoms is not uniform both along the growth direction and within the film plane. A statistically high Bi-content region is observed at the bottom of the InPBi layer close to the InPBi/InP interface. Bi-rich V-shaped walls on the (-111) and (1-11) planes close to the InPBi/InP interface and quasi-periodic Bi-rich nanowalls in the (1-10) plane with a periodicity of about 100 nm are observed. A growth model is proposed to explain the formation of these unique Bi-related nanoscale features. These features can significantly affect the deep levels of the InPBi epilayer. The regions in the InPBi layer with or without these Bi-related nanostructures exhibit different optical properties.

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