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Rao F, Ding K, Zhou Y, et al. Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing. Science. 2017;358(6369):1423-1427doi: 10.1126/science.aao3212.
Rao, F., Ding, K., Zhou, Y., Zheng, Y., Xia, M., Lv, S., Song, Z., Feng, S., Ronneberger, I., Mazzarello, R., Zhang, W., & Ma, E. (2017). Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing. Science (New York, N.Y.), 358(6369), 1423-1427. https://doi.org/10.1126/science.aao3212
Rao, Feng, et al. "Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing." Science (New York, N.Y.) vol. 358,6369 (2017): 1423-1427. doi: https://doi.org/10.1126/science.aao3212
Rao F, Ding K, Zhou Y, Zheng Y, Xia M, Lv S, Song Z, Feng S, Ronneberger I, Mazzarello R, Zhang W, Ma E. Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing. Science. 2017 Dec 15;358(6369):1423-1427. doi: 10.1126/science.aao3212. Epub 2017 Nov 09. PMID: 29123020.
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Science. 2017 Dec 15;358(6369):1423-1427. doi: 10.1126/science.aao3212. Epub 2017 Nov 09.

Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing.

Science (New York, N.Y.)

Feng Rao, Keyuan Ding, Yuxing Zhou, Yonghui Zheng, Mengjiao Xia, Shilong Lv, Zhitang Song, Songlin Feng, Ider Ronneberger, Riccardo Mazzarello, Wei Zhang, Evan Ma

Affiliations

  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  2. College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China.
  3. Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
  4. International Laboratory of Quantum Functional Materials of Henan, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China.
  5. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China. [email protected] [email protected] [email protected].
  6. Institute for Theoretical Solid State Physics, JARA-FIT and JARA-HPC, RWTH Aachen University, Aachen D-52074, Germany.
  7. Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, MD 21218, USA.

PMID: 29123020 DOI: 10.1126/science.aao3212

Abstract

Operation speed is a key challenge in phase-change random-access memory (PCRAM) technology, especially for achieving subnanosecond high-speed cache memory. Commercialized PCRAM products are limited by the tens of nanoseconds writing speed, originating from the stochastic crystal nucleation during the crystallization of amorphous germanium antimony telluride (Ge

Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

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