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Xu J, Singh S, Katoch J, et al. Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts. Nat Commun. 2018;9(1):2869doi: 10.1038/s41467-018-05358-3.
Xu, J., Singh, S., Katoch, J., Wu, G., Zhu, T., Žutić, I., & Kawakami, R. K. (2018). Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts. Nature communications, 9(1), 2869. https://doi.org/10.1038/s41467-018-05358-3
Xu, Jinsong, et al. "Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts." Nature communications vol. 9,1 (2018): 2869. doi: https://doi.org/10.1038/s41467-018-05358-3
Xu J, Singh S, Katoch J, Wu G, Zhu T, Žutić I, Kawakami RK. Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts. Nat Commun. 2018 Jul 20;9(1):2869. doi: 10.1038/s41467-018-05358-3. PMID: 30030444; PMCID: PMC6054683.
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Nat Commun. 2018 Jul 20;9(1):2869. doi: 10.1038/s41467-018-05358-3.

Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts.

Nature communications

Jinsong Xu, Simranjeet Singh, Jyoti Katoch, Guanzhong Wu, Tiancong Zhu, Igor Žutić, Roland K Kawakami

Affiliations

  1. Department of Physics, The Ohio State University, Columbus, OH, 43210, USA.
  2. Department of Physics, University at Buffalo, State University of New York, Buffalo, New York, 14260, USA.
  3. Department of Physics, The Ohio State University, Columbus, OH, 43210, USA. [email protected].

PMID: 30030444 PMCID: PMC6054683 DOI: 10.1038/s41467-018-05358-3

Abstract

Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, we demonstrate gate-tunable spin transport in such encapsulated graphene-based spin valves with one-dimensional (1D) ferromagnetic edge contacts. An electrostatic backgate tunes the Fermi level of graphene to probe different energy levels of the spin-polarized density of states (DOS) of the 1D ferromagnetic contact, which interact through a magnetic proximity effect (MPE) that induces ferromagnetism in graphene. In contrast to conventional spin valves, where switching between high- and low-resistance configuration requires magnetization reversal by an applied magnetic field or a high-density spin-polarized current, we provide an alternative path with the gate-controlled spin inversion in graphene.

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