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Liu H, Mendelson N, Abidi IH, et al. Rational Control on Quantum Emitter Formation in Carbon-Doped Monolayer Hexagonal Boron Nitride. ACS Appl Mater Interfaces. 2022;doi: 10.1021/acsami.1c21781.
Liu, H., Mendelson, N., Abidi, I. H., Li, S., Liu, Z., Cai, Y., Zhang, K., You, J., Tamtaji, M., Wong, H., Ding, Y., Chen, G., Aharonovich, I., & Luo, Z. (2022). Rational Control on Quantum Emitter Formation in Carbon-Doped Monolayer Hexagonal Boron Nitride. ACS applied materials & interfaces, . https://doi.org/10.1021/acsami.1c21781
Liu, Hongwei, et al. "Rational Control on Quantum Emitter Formation in Carbon-Doped Monolayer Hexagonal Boron Nitride." ACS applied materials & interfaces vol. (2022). doi: https://doi.org/10.1021/acsami.1c21781
Liu H, Mendelson N, Abidi IH, Li S, Liu Z, Cai Y, Zhang K, You J, Tamtaji M, Wong H, Ding Y, Chen G, Aharonovich I, Luo Z. Rational Control on Quantum Emitter Formation in Carbon-Doped Monolayer Hexagonal Boron Nitride. ACS Appl Mater Interfaces. 2022 Jan 06; doi: 10.1021/acsami.1c21781. Epub 2022 Jan 06. PMID: 34989551.
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ACS Appl Mater Interfaces. 2022 Jan 06; doi: 10.1021/acsami.1c21781. Epub 2022 Jan 06.

Rational Control on Quantum Emitter Formation in Carbon-Doped Monolayer Hexagonal Boron Nitride.

ACS applied materials & interfaces

Hongwei Liu, Noah Mendelson, Irfan H Abidi, Shaobo Li, Zhenjing Liu, Yuting Cai, Kenan Zhang, Jiawen You, Mohsen Tamtaji, Hoilun Wong, Yao Ding, Guojie Chen, Igor Aharonovich, Zhengtang Luo

Affiliations

  1. Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China.
  2. School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
  3. Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States.
  4. Centre for Advanced 2D Materials, National University of Singapore, 117542 Singapore.
  5. School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, P. R. China.
  6. School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, P. R. China.
  7. Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, Foshan University, Foshan 528225, P. R. China.
  8. School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528225, P. R. China.
  9. ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia.

PMID: 34989551 DOI: 10.1021/acsami.1c21781

Abstract

Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) are promising candidates for quantum light generation. Despite this, techniques to control the formation of hBN SPEs down to the monolayer limit are yet to be demonstrated. Recent experimental and theoretical investigations have suggested that the visible wavelength single-photon emitters in hBN originate from carbon-related defects. Here, we demonstrate a simple strategy for controlling SPE creation during the chemical vapor deposition growth of monolayer hBN via regulating surface carbon concentration. By increasing the surface carbon concentration during hBN growth, we observe increases in carbon doping levels by 2.4-fold for B-C bonds and 1.6-fold for N-C bonds. For the same samples, we observe an increase in the SPE density from 0.13 to 0.30 emitters/μm

Keywords: carbon doping; chemical vapor deposition; hBN; monolayer; single-photon emitters

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