Display options
Cite
Smith HL, Dull JT, Mohapatra SK, et al. Powerful Organic Molecular Oxidants and Reductants Enable Ambipolar Injection in a Large-Gap Organic Homojunction Diode. ACS Appl Mater Interfaces. 2022;doi: 10.1021/acsami.1c21302.
Smith, H. L., Dull, J. T., Mohapatra, S. K., Al Kurdi, K., Barlow, S., Marder, S. R., Rand, B. P., & Kahn, A. (2022). Powerful Organic Molecular Oxidants and Reductants Enable Ambipolar Injection in a Large-Gap Organic Homojunction Diode. ACS applied materials & interfaces, . https://doi.org/10.1021/acsami.1c21302
Smith, Hannah L, et al. "Powerful Organic Molecular Oxidants and Reductants Enable Ambipolar Injection in a Large-Gap Organic Homojunction Diode." ACS applied materials & interfaces vol. (2022). doi: https://doi.org/10.1021/acsami.1c21302
Smith HL, Dull JT, Mohapatra SK, Al Kurdi K, Barlow S, Marder SR, Rand BP, Kahn A. Powerful Organic Molecular Oxidants and Reductants Enable Ambipolar Injection in a Large-Gap Organic Homojunction Diode. ACS Appl Mater Interfaces. 2022 Jan 03; doi: 10.1021/acsami.1c21302. Epub 2022 Jan 03. PMID: 34978787.
Copy Download .nbib Format: NLM
Share it on

ACS Appl Mater Interfaces. 2022 Jan 03; doi: 10.1021/acsami.1c21302. Epub 2022 Jan 03.

Powerful Organic Molecular Oxidants and Reductants Enable Ambipolar Injection in a Large-Gap Organic Homojunction Diode.

ACS applied materials & interfaces

Hannah L Smith, Jordan T Dull, Swagat K Mohapatra, Khaled Al Kurdi, Stephen Barlow, Seth R Marder, Barry P Rand, Antoine Kahn

Affiliations

  1. Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, United States.
  2. School of Chemistry and Biochemistry and Center for Organic Photonics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
  3. Department of Industrial and Engineering Chemistry, Institute of Chemical Technology?Indian Oil Odisha Campus, IIT Kharagpur Extension Center, Bhubaneswar 751013, Odisha, India.
  4. Renewable and Sustainable Energy Institute (RASEI), University of Colorado Boulder, Boulder, Colorado 80309, United States.
  5. Department of Chemical and Biological Engineering and Department of Chemistry, University of Colorado Boulder, Boulder, Colorado 80309, United States.
  6. Andlinger Center for Energy and the Environment, Princeton University, Princeton, New Jersey 08544, United States.

PMID: 34978787 DOI: 10.1021/acsami.1c21302

Abstract

Doping has proven to be a critical tool for enhancing the performance of organic semiconductors in devices like organic light-emitting diodes. However, the challenge in working with high-ionization-energy (IE) organic semiconductors is to find p-dopants with correspondingly high electron affinity (EA) that will improve the conductivity and charge carrier transport in a film. Here, we use an oxidant that has been recently recognized to be a very strong p-type dopant, hexacyano-1,2,3-trimethylene-cyclopropane (CN6-CP). The EA of CN6-CP has been previously estimated via cyclic voltammetry to be 5.87 eV, almost 300 meV higher than other known high-EA organic molecular oxidants. We measure the frontier orbitals of CN6-CP using ultraviolet and inverse photoemission spectroscopy techniques and confirm a high EA value of 5.88 eV in the condensed phase. The introduction of CN6-CP in a film of large-band-gap, large-IE phenyldi(pyren-1-yl)phosphine oxide (POPy

Keywords: light emission; n-dopants; organic semiconductors; p-dopants; photoemission spectroscopy; p−i−n homojunctions

Publication Types