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Cohen JD, Michelson CE. Effects of the implantation of oxygen, nitrogen, and carbon on the density of states of n-type hydrogenated amorphous silicon. Phys Rev B Condens Matter. 1990;41(3):1529-1541doi: 10.1103/physrevb.41.1529.
Cohen, J. D., & Michelson, C. E. (1990). Effects of the implantation of oxygen, nitrogen, and carbon on the density of states of n-type hydrogenated amorphous silicon. Physical review. B, Condensed matter, 41(3), 1529-1541. https://doi.org/10.1103/physrevb.41.1529
Cohen, and Michelson. "Effects of the implantation of oxygen, nitrogen, and carbon on the density of states of n-type hydrogenated amorphous silicon." Physical review. B, Condensed matter vol. 41,3 (1990): 1529-1541. doi: https://doi.org/10.1103/physrevb.41.1529
Cohen JD, Michelson CE. Effects of the implantation of oxygen, nitrogen, and carbon on the density of states of n-type hydrogenated amorphous silicon. Phys Rev B Condens Matter. 1990 Jan 15;41(3):1529-1541. doi: 10.1103/physrevb.41.1529. PMID: 9993869.
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