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Mitchell B, Timmerman D, Poplawsky J, et al. Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications. Sci Rep. 2016;6:18808doi: 10.1038/srep18808.
Mitchell, B., Timmerman, D., Poplawsky, J., Zhu, W., Lee, D., Wakamatsu, R., Takatsu, J., Matsuda, M., Guo, W., Lorenz, K., Alves, E., Koizumi, A., Dierolf, V., & Fujiwara, Y. (2016). Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications. Scientific reports, 618808. https://doi.org/10.1038/srep18808
Mitchell, B, et al. "Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications." Scientific reports vol. 6 (2016): 18808. doi: https://doi.org/10.1038/srep18808
Mitchell B, Timmerman D, Poplawsky J, Zhu W, Lee D, Wakamatsu R, Takatsu J, Matsuda M, Guo W, Lorenz K, Alves E, Koizumi A, Dierolf V, Fujiwara Y. Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications. Sci Rep. 2016 Jan 04;6:18808. doi: 10.1038/srep18808. PMID: 26725651; PMCID: PMC4698738.
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