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André Y, Lekhal K, Hoggan P, et al. Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: ab initio simulations supporting center nucleation. J Chem Phys. 2014;140(19):194706doi: 10.1063/1.4874875.
André, Y., Lekhal, K., Hoggan, P., Avit, G., Cadiz, F., Rowe, A., Paget, D., Petit, E., Leroux, C., Trassoudaine, A., Ramdani, M. R., Monier, G., Colas, D., Ajib, R., Castelluci, D., & Gil, E. (2014). Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: ab initio simulations supporting center nucleation. The Journal of chemical physics, 140(19), 194706. https://doi.org/10.1063/1.4874875
André, Yamina, et al. "Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: ab initio simulations supporting center nucleation." The Journal of chemical physics vol. 140,19 (2014): 194706. doi: https://doi.org/10.1063/1.4874875
André Y, Lekhal K, Hoggan P, Avit G, Cadiz F, Rowe A, Paget D, Petit E, Leroux C, Trassoudaine A, Ramdani MR, Monier G, Colas D, Ajib R, Castelluci D, Gil E. Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: ab initio simulations supporting center nucleation. J Chem Phys. 2014 May 21;140(19):194706. doi: 10.1063/1.4874875. PMID: 24852556.
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