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Woods KN, Chiang TH, Plassmeyer PN, et al. High-κ Lanthanum Zirconium Oxide Thin Film Dielectrics from Aqueous Solution Precursors. ACS Appl Mater Interfaces. 2017;9(12):10897-10903doi: 10.1021/acsami.7b00915.
Woods, K. N., Chiang, T. H., Plassmeyer, P. N., Kast, M. G., Lygo, A. C., Grealish, A. K., Boettcher, S. W., & Page, C. J. (2017). High-κ Lanthanum Zirconium Oxide Thin Film Dielectrics from Aqueous Solution Precursors. ACS applied materials & interfaces, 9(12), 10897-10903. https://doi.org/10.1021/acsami.7b00915
Woods, Keenan N, et al. "High-κ Lanthanum Zirconium Oxide Thin Film Dielectrics from Aqueous Solution Precursors." ACS applied materials & interfaces vol. 9,12 (2017): 10897-10903. doi: https://doi.org/10.1021/acsami.7b00915
Woods KN, Chiang TH, Plassmeyer PN, Kast MG, Lygo AC, Grealish AK, Boettcher SW, Page CJ. High-κ Lanthanum Zirconium Oxide Thin Film Dielectrics from Aqueous Solution Precursors. ACS Appl Mater Interfaces. 2017 Mar 29;9(12):10897-10903. doi: 10.1021/acsami.7b00915. Epub 2017 Mar 14. PMID: 28262013.
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