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Fontserè A, Pérez-Tomás A, Placidi M, et al. Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors. Nanotechnology. 2012;23(39):395204doi: 10.1088/0957-4484/23/39/395204.
Fontserè, A., Pérez-Tomás, A., Placidi, M., Llobet, J., Baron, N., Chenot, S., Cordier, Y., Moreno, J. C., Jennings, M. R., Gammon, P. M., Fisher, C. A., Iglesias, V., Porti, M., Bayerl, A., Lanza, M., & Nafría, M. (2012). Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors. Nanotechnology, 23(39), 395204. https://doi.org/10.1088/0957-4484/23/39/395204
Fontserè, A, et al. "Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors." Nanotechnology vol. 23,39 (2012): 395204. doi: https://doi.org/10.1088/0957-4484/23/39/395204
Fontserè A, Pérez-Tomás A, Placidi M, Llobet J, Baron N, Chenot S, Cordier Y, Moreno JC, Jennings MR, Gammon PM, Fisher CA, Iglesias V, Porti M, Bayerl A, Lanza M, Nafría M. Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors. Nanotechnology. 2012 Oct 05;23(39):395204. doi: 10.1088/0957-4484/23/39/395204. Epub 2012 Sep 12. PMID: 22971927.
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