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Atom-probe for FinFET dopant characterization.

Ultramicroscopy

Kambham AK, Mody J, Gilbert M, Koelling S, Vandervorst W.
PMID: 21288644
Ultramicroscopy. 2011 May;111(6):535-9. doi: 10.1016/j.ultramic.2011.01.017. Epub 2011 Jan 18.

With the continuous shrinking of transistors and advent of new transistor architectures to keep in pace with Moore's law and ITRS goals, there is a rising interest in multigate 3D-devices like FinFETs where the channel is surrounded by gates...

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Kambham AK, Mody J, Gilbert M, et al. Atom-probe for FinFET dopant characterization. Ultramicroscopy. 2011;111(6):535-9doi: 10.1016/j.ultramic.2011.01.017.
Kambham, A. K., Mody, J., Gilbert, M., Koelling, S., & Vandervorst, W. (2011). Atom-probe for FinFET dopant characterization. Ultramicroscopy, 111(6), 535-9. https://doi.org/10.1016/j.ultramic.2011.01.017
Kambham, A K, et al. "Atom-probe for FinFET dopant characterization." Ultramicroscopy vol. 111,6 (2011): 535-9. doi: https://doi.org/10.1016/j.ultramic.2011.01.017
Kambham AK, Mody J, Gilbert M, Koelling S, Vandervorst W. Atom-probe for FinFET dopant characterization. Ultramicroscopy. 2011 May;111(6):535-9. doi: 10.1016/j.ultramic.2011.01.017. Epub 2011 Jan 18. PMID: 21288644.
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Hard Superconducting Gap in InSb Nanowires.

Nano letters

Gül Ö, Zhang H, de Vries FK, van Veen J, Zuo K, Mourik V, Conesa-Boj S, Nowak MP, van Woerkom DJ, Quintero-Pérez M, Cassidy MC, Geresdi A, Koelling S, Car D, Plissard SR, Bakkers EP, Kouwenhoven LP.
PMID: 28355877
Nano Lett. 2017 Apr 12;17(4):2690-2696. doi: 10.1021/acs.nanolett.7b00540. Epub 2017 Apr 03.

Topological superconductivity is a state of matter that can host Majorana modes, the building blocks of a topological quantum computer. Many experimental platforms predicted to show such a topological state rely on proximity-induced superconductivity. However, accessing the topological properties...

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Gül Ö, Zhang H, de Vries FK, et al. Hard Superconducting Gap in InSb Nanowires. Nano Lett. 2017;17(4):2690-2696doi: 10.1021/acs.nanolett.7b00540.
Gül, �. �., Zhang, H., de Vries, F. K., van Veen, J., Zuo, K., Mourik, V., Conesa-Boj, S., Nowak, M. P., van Woerkom, D. J., Quintero-Pérez, M., Cassidy, M. C., Geresdi, A., Koelling, S., Car, D., Plissard, S. R., Bakkers, E. P., & Kouwenhoven, L. P. (2017). Hard Superconducting Gap in InSb Nanowires. Nano letters, 17(4), 2690-2696. https://doi.org/10.1021/acs.nanolett.7b00540
Gül, Önder, et al. "Hard Superconducting Gap in InSb Nanowires." Nano letters vol. 17,4 (2017): 2690-2696. doi: https://doi.org/10.1021/acs.nanolett.7b00540
Gül Ö, Zhang H, de Vries FK, van Veen J, Zuo K, Mourik V, Conesa-Boj S, Nowak MP, van Woerkom DJ, Quintero-Pérez M, Cassidy MC, Geresdi A, Koelling S, Car D, Plissard SR, Bakkers EP, Kouwenhoven LP. Hard Superconducting Gap in InSb Nanowires. Nano Lett. 2017 Apr 12;17(4):2690-2696. doi: 10.1021/acs.nanolett.7b00540. Epub 2017 Apr 03. PMID: 28355877; PMCID: PMC5446204.
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Anti-stiction coating for mechanically tunable photonic crystal devices.

Optics express

Petruzzella M, Zobenica Ž, Cotrufo M, Zardetto V, Mameli A, Pagliano F, Koelling S, van Otten FWM, Roozeboom F, Kessels WMM, van der Heijden RW, Fiore A.
PMID: 29475245
Opt Express. 2018 Feb 19;26(4):3882-3891. doi: 10.1364/OE.26.003882.

A method to avoid the stiction failure in nano-electro-opto-mechanical systems has been demonstrated by coating the system with an anti-stiction layer of Al

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Petruzzella M, Zobenica Ž, Cotrufo M, et al. Anti-stiction coating for mechanically tunable photonic crystal devices. Opt Express. 2018;26(4):3882-3891doi: 10.1364/OE.26.003882.
Petruzzella, M., Zobenica, �. �., Cotrufo, M., Zardetto, V., Mameli, A., Pagliano, F., Koelling, S., van Otten, F. W. M., Roozeboom, F., Kessels, W. M. M., van der Heijden, R. W., & Fiore, A. (2018). Anti-stiction coating for mechanically tunable photonic crystal devices. Optics express, 26(4), 3882-3891. https://doi.org/10.1364/OE.26.003882
Petruzzella, M, et al. "Anti-stiction coating for mechanically tunable photonic crystal devices." Optics express vol. 26,4 (2018): 3882-3891. doi: https://doi.org/10.1364/OE.26.003882
Petruzzella M, Zobenica Ž, Cotrufo M, Zardetto V, Mameli A, Pagliano F, Koelling S, van Otten FWM, Roozeboom F, Kessels WMM, van der Heijden RW, Fiore A. Anti-stiction coating for mechanically tunable photonic crystal devices. Opt Express. 2018 Feb 19;26(4):3882-3891. doi: 10.1364/OE.26.003882. PMID: 29475245.
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Suppressing Segregation in Highly Phosphorus Doped Silicon Monolayers.

ACS nano

Keizer JG, Koelling S, Koenraad PM, Simmons MY.
PMID: 26568129
ACS Nano. 2015 Dec 22;9(12):12537-41. doi: 10.1021/acsnano.5b06299. Epub 2015 Nov 20.

Sharply defined dopant profiles and low resistivity are highly desired qualities in the microelectronic industry, and more recently, in the development of an all epitaxial Si:P based quantum computer. In this work, we use thin (monolayers thick) room temperature...

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Keizer JG, Koelling S, Koenraad PM, et al. Suppressing Segregation in Highly Phosphorus Doped Silicon Monolayers. ACS Nano. 2015;9(12):12537-41doi: 10.1021/acsnano.5b06299.
Keizer, J. G., Koelling, S., Koenraad, P. M., & Simmons, M. Y. (2015). Suppressing Segregation in Highly Phosphorus Doped Silicon Monolayers. ACS nano, 9(12), 12537-41. https://doi.org/10.1021/acsnano.5b06299
Keizer, Joris G, et al. "Suppressing Segregation in Highly Phosphorus Doped Silicon Monolayers." ACS nano vol. 9,12 (2015): 12537-41. doi: https://doi.org/10.1021/acsnano.5b06299
Keizer JG, Koelling S, Koenraad PM, Simmons MY. Suppressing Segregation in Highly Phosphorus Doped Silicon Monolayers. ACS Nano. 2015 Dec 22;9(12):12537-41. doi: 10.1021/acsnano.5b06299. Epub 2015 Nov 20. PMID: 26568129.
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True Atomic-Scale Imaging in Three Dimensions: A Review of the Rebirth of Field-Ion Microscopy.

Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada

Vurpillot F, Danoix F, Gilbert M, Koelling S, Dagan M, Seidman DN.
PMID: 28337951
Microsc Microanal. 2017 Apr;23(2):210-220. doi: 10.1017/S1431927617000198. Epub 2017 Mar 24.

This article reviews recent advances utilizing field-ion microscopy (FIM) to extract atomic-scale three-dimensional images of materials. This capability is not new, as the first atomic-scale reconstructions of features utilizing FIM were demonstrated decades ago. The rise of atom probe...

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Vurpillot F, Danoix F, Gilbert M, et al. True Atomic-Scale Imaging in Three Dimensions: A Review of the Rebirth of Field-Ion Microscopy. Microsc Microanal. 2017;23(2):210-220doi: 10.1017/S1431927617000198.
Vurpillot, F., Danoix, F., Gilbert, M., Koelling, S., Dagan, M., & Seidman, D. N. (2017). True Atomic-Scale Imaging in Three Dimensions: A Review of the Rebirth of Field-Ion Microscopy. Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada, 23(2), 210-220. https://doi.org/10.1017/S1431927617000198
Vurpillot, Francois, et al. "True Atomic-Scale Imaging in Three Dimensions: A Review of the Rebirth of Field-Ion Microscopy." Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada vol. 23,2 (2017): 210-220. doi: https://doi.org/10.1017/S1431927617000198
Vurpillot F, Danoix F, Gilbert M, Koelling S, Dagan M, Seidman DN. True Atomic-Scale Imaging in Three Dimensions: A Review of the Rebirth of Field-Ion Microscopy. Microsc Microanal. 2017 Apr;23(2):210-220. doi: 10.1017/S1431927617000198. Epub 2017 Mar 24. PMID: 28337951.
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Band structure engineering in organic semiconductors.

Science (New York, N.Y.)

Schwarze M, Tress W, Beyer B, Gao F, Scholz R, Poelking C, Ortstein K, Günther AA, Kasemann D, Andrienko D, Leo K.
PMID: 27313043
Science. 2016 Jun 17;352(6292):1446-9. doi: 10.1126/science.aaf0590.

A key breakthrough in modern electronics was the introduction of band structure engineering, the design of almost arbitrary electronic potential structures by alloying different semiconductors to continuously tune the band gap and band-edge energies. Implementation of this approach in...

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Schwarze M, Tress W, Beyer B, et al. Band structure engineering in organic semiconductors. Science. 2016;352(6292):1446-9doi: 10.1126/science.aaf0590.
Schwarze, M., Tress, W., Beyer, B., Gao, F., Scholz, R., Poelking, C., Ortstein, K., Günther, A. A., Kasemann, D., Andrienko, D., & Leo, K. (2016). Band structure engineering in organic semiconductors. Science (New York, N.Y.), 352(6292), 1446-9. https://doi.org/10.1126/science.aaf0590
Schwarze, Martin, et al. "Band structure engineering in organic semiconductors." Science (New York, N.Y.) vol. 352,6292 (2016): 1446-9. doi: https://doi.org/10.1126/science.aaf0590
Schwarze M, Tress W, Beyer B, Gao F, Scholz R, Poelking C, Ortstein K, Günther AA, Kasemann D, Andrienko D, Leo K. Band structure engineering in organic semiconductors. Science. 2016 Jun 17;352(6292):1446-9. doi: 10.1126/science.aaf0590. PMID: 27313043.
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Design rules for organic donor-acceptor heterojunctions: pathway for charge splitting and detrapping.

Journal of the American Chemical Society

Poelking C, Andrienko D.
PMID: 25902037
J Am Chem Soc. 2015 May 20;137(19):6320-6. doi: 10.1021/jacs.5b02130. Epub 2015 May 07.

Organic solar cells rely on the conversion of a Frenkel exciton into free charges via a charge-transfer state formed on a molecular donor-acceptor pair. These charge-transfer states are strongly bound by Coulomb interactions and yet efficiently converted into charge-separated...

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Poelking C, Andrienko D. Design rules for organic donor-acceptor heterojunctions: pathway for charge splitting and detrapping. J Am Chem Soc. 2015;137(19):6320-6doi: 10.1021/jacs.5b02130.
Poelking, C., & Andrienko, D. (2015). Design rules for organic donor-acceptor heterojunctions: pathway for charge splitting and detrapping. Journal of the American Chemical Society, 137(19), 6320-6. https://doi.org/10.1021/jacs.5b02130
Poelking, Carl, and Andrienko, Denis. "Design rules for organic donor-acceptor heterojunctions: pathway for charge splitting and detrapping." Journal of the American Chemical Society vol. 137,19 (2015): 6320-6. doi: https://doi.org/10.1021/jacs.5b02130
Poelking C, Andrienko D. Design rules for organic donor-acceptor heterojunctions: pathway for charge splitting and detrapping. J Am Chem Soc. 2015 May 20;137(19):6320-6. doi: 10.1021/jacs.5b02130. Epub 2015 May 07. PMID: 25902037.
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The Use of Europiumstearate to Trace Polyethylene Wear Debris in Joint Fluid after Prosthetic Joint Replacement - A Feasibility Study.

Trends in applied spectroscopy

Kunze J, Ngai V, Koelling S, Jacobs JJ, Wimmer MA.
PMID: 24920867
Trends Appl Spectrosc. 2013;10:43-48.

Ultra-high molecular weight polyethylene (UHMWPE) is the most common counterface material against metals or ceramics in artificial hip or knee joints. Wear and the resulting particulate debris, however, limit the life span of the implant. In this study, the...

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Kunze J, Ngai V, Koelling S, et al. The Use of Europiumstearate to Trace Polyethylene Wear Debris in Joint Fluid after Prosthetic Joint Replacement - A Feasibility Study. Trends Appl Spectrosc. 2013;10:43-48
Kunze, J., Ngai, V., Koelling, S., Jacobs, J. J., & Wimmer, M. A. (2013). The Use of Europiumstearate to Trace Polyethylene Wear Debris in Joint Fluid after Prosthetic Joint Replacement - A Feasibility Study. Trends in applied spectroscopy, 1043-48.
Kunze, J, et al. "The Use of Europiumstearate to Trace Polyethylene Wear Debris in Joint Fluid after Prosthetic Joint Replacement - A Feasibility Study." Trends in applied spectroscopy vol. 10 (2013): 43-48.
Kunze J, Ngai V, Koelling S, Jacobs JJ, Wimmer MA. The Use of Europiumstearate to Trace Polyethylene Wear Debris in Joint Fluid after Prosthetic Joint Replacement - A Feasibility Study. Trends Appl Spectrosc. 2013;10:43-48. PMID: 24920867; PMCID: PMC4049185.
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Resonant interaction of plasmons and intersubband resonances in a two-dimensional electron system.

Physical review letters

Heitmann D, Kotthaus JP, Oelting S.
PMID: 10032791
Phys Rev Lett. 1986 Apr 28;56(17):1846-1849. doi: 10.1103/PhysRevLett.56.1846.

No abstract available.

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Heitmann D, Kotthaus JP, Oelting S. Resonant interaction of plasmons and intersubband resonances in a two-dimensional electron system. Phys Rev Lett. 1986;56(17):1846-1849doi: 10.1103/PhysRevLett.56.1846.
Heitmann, D., Kotthaus, J. P., & Oelting, S. (1986). Resonant interaction of plasmons and intersubband resonances in a two-dimensional electron system. Physical review letters, 56(17), 1846-1849. https://doi.org/10.1103/PhysRevLett.56.1846
Heitmann, et al. "Resonant interaction of plasmons and intersubband resonances in a two-dimensional electron system." Physical review letters vol. 56,17 (1986): 1846-1849. doi: https://doi.org/10.1103/PhysRevLett.56.1846
Heitmann D, Kotthaus JP, Oelting S. Resonant interaction of plasmons and intersubband resonances in a two-dimensional electron system. Phys Rev Lett. 1986 Apr 28;56(17):1846-1849. doi: 10.1103/PhysRevLett.56.1846. PMID: 10032791.
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Spin-Orbit Interaction and Induced Superconductivity in a One-Dimensional Hole Gas.

Nano letters

de Vries FK, Shen J, Skolasinski RJ, Nowak MP, Varjas D, Wang L, Wimmer M, Ridderbos J, Zwanenburg FA, Li A, Koelling S, Verheijen MA, Bakkers EPAM, Kouwenhoven LP.
PMID: 30192147
Nano Lett. 2018 Oct 10;18(10):6483-6488. doi: 10.1021/acs.nanolett.8b02981. Epub 2018 Sep 21.

Low dimensional semiconducting structures with strong spin-orbit interaction (SOI) and induced superconductivity attracted great interest in the search for topological superconductors. Both the strong SOI and hard superconducting gap are directly related to the topological protection of the predicted...

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de Vries FK, Shen J, Skolasinski RJ, et al. Spin-Orbit Interaction and Induced Superconductivity in a One-Dimensional Hole Gas. Nano Lett. 2018;18(10):6483-6488doi: 10.1021/acs.nanolett.8b02981.
de Vries, F. K., Shen, J., Skolasinski, R. J., Nowak, M. P., Varjas, D., Wang, L., Wimmer, M., Ridderbos, J., Zwanenburg, F. A., Li, A., Koelling, S., Verheijen, M. A., Bakkers, E. P. A. M., & Kouwenhoven, L. P. (2018). Spin-Orbit Interaction and Induced Superconductivity in a One-Dimensional Hole Gas. Nano letters, 18(10), 6483-6488. https://doi.org/10.1021/acs.nanolett.8b02981
de Vries, Folkert K, et al. "Spin-Orbit Interaction and Induced Superconductivity in a One-Dimensional Hole Gas." Nano letters vol. 18,10 (2018): 6483-6488. doi: https://doi.org/10.1021/acs.nanolett.8b02981
de Vries FK, Shen J, Skolasinski RJ, Nowak MP, Varjas D, Wang L, Wimmer M, Ridderbos J, Zwanenburg FA, Li A, Koelling S, Verheijen MA, Bakkers EPAM, Kouwenhoven LP. Spin-Orbit Interaction and Induced Superconductivity in a One-Dimensional Hole Gas. Nano Lett. 2018 Oct 10;18(10):6483-6488. doi: 10.1021/acs.nanolett.8b02981. Epub 2018 Sep 21. PMID: 30192147; PMCID: PMC6187512.
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Ballistic Phonons in Ultrathin Nanowires.

Nano letters

Vakulov D, Gireesan S, Swinkels MY, Chavez R, Vogelaar T, Torres P, Campo A, De Luca M, Verheijen MA, Koelling S, Gagliano L, Haverkort JEM, Alvarez FX, Bobbert PA, Zardo I, Bakkers EPAM.
PMID: 32091910
Nano Lett. 2020 Apr 08;20(4):2703-2709. doi: 10.1021/acs.nanolett.0c00320. Epub 2020 Mar 03.

According to Fourier's law, a temperature difference across a material results in a linear temperature profile and a thermal conductance that decreases inversely proportional to the system length. These are the hallmarks of diffusive heat flow. Here, we report...

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Vakulov D, Gireesan S, Swinkels MY, et al. Ballistic Phonons in Ultrathin Nanowires. Nano Lett. 2020;20(4):2703-2709doi: 10.1021/acs.nanolett.0c00320.
Vakulov, D., Gireesan, S., Swinkels, M. Y., Chavez, R., Vogelaar, T., Torres, P., Campo, A., De Luca, M., Verheijen, M. A., Koelling, S., Gagliano, L., Haverkort, J. E. M., Alvarez, F. X., Bobbert, P. A., Zardo, I., & Bakkers, E. P. A. M. (2020). Ballistic Phonons in Ultrathin Nanowires. Nano letters, 20(4), 2703-2709. https://doi.org/10.1021/acs.nanolett.0c00320
Vakulov, Daniel, et al. "Ballistic Phonons in Ultrathin Nanowires." Nano letters vol. 20,4 (2020): 2703-2709. doi: https://doi.org/10.1021/acs.nanolett.0c00320
Vakulov D, Gireesan S, Swinkels MY, Chavez R, Vogelaar T, Torres P, Campo A, De Luca M, Verheijen MA, Koelling S, Gagliano L, Haverkort JEM, Alvarez FX, Bobbert PA, Zardo I, Bakkers EPAM. Ballistic Phonons in Ultrathin Nanowires. Nano Lett. 2020 Apr 08;20(4):2703-2709. doi: 10.1021/acs.nanolett.0c00320. Epub 2020 Mar 03. PMID: 32091910; PMCID: PMC7146865.
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High Mobility Stemless InSb Nanowires.

Nano letters

Badawy G, Gazibegovic S, Borsoi F, Heedt S, Wang CA, Koelling S, Verheijen MA, Kouwenhoven LP, Bakkers EPAM.
PMID: 31094527
Nano Lett. 2019 Jun 12;19(6):3575-3582. doi: 10.1021/acs.nanolett.9b00545. Epub 2019 May 22.

High aspect-ratio InSb nanowires (NWs) of high chemical purity are sought for implementing advanced quantum devices. The growth of InSb NWs is challenging, generally requiring a stem of a foreign material for nucleation. Such a stem tends to limit...

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Badawy G, Gazibegovic S, Borsoi F, et al. High Mobility Stemless InSb Nanowires. Nano Lett. 2019;19(6):3575-3582doi: 10.1021/acs.nanolett.9b00545.
Badawy, G., Gazibegovic, S., Borsoi, F., Heedt, S., Wang, C. A., Koelling, S., Verheijen, M. A., Kouwenhoven, L. P., & Bakkers, E. P. A. M. (2019). High Mobility Stemless InSb Nanowires. Nano letters, 19(6), 3575-3582. https://doi.org/10.1021/acs.nanolett.9b00545
Badawy, Ghada, et al. "High Mobility Stemless InSb Nanowires." Nano letters vol. 19,6 (2019): 3575-3582. doi: https://doi.org/10.1021/acs.nanolett.9b00545
Badawy G, Gazibegovic S, Borsoi F, Heedt S, Wang CA, Koelling S, Verheijen MA, Kouwenhoven LP, Bakkers EPAM. High Mobility Stemless InSb Nanowires. Nano Lett. 2019 Jun 12;19(6):3575-3582. doi: 10.1021/acs.nanolett.9b00545. Epub 2019 May 22. PMID: 31094527.
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Showing 1 to 12 of 60 entries