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Forti S, Rossi A, Büch H, et al. Electronic properties of single-layer tungsten disulfide on epitaxial graphene on silicon carbide. Nanoscale. 2017;9(42):16412-16419doi: 10.1039/c7nr05495e.
Forti, S., Rossi, A., Büch, H., Cavallucci, T., Bisio, F., Sala, A., Menteş, T. O., Locatelli, A., Magnozzi, M., Canepa, M., Müller, K., Link, S., Starke, U., Tozzini, V., & Coletti, C. (2017). Electronic properties of single-layer tungsten disulfide on epitaxial graphene on silicon carbide. Nanoscale, 9(42), 16412-16419. https://doi.org/10.1039/c7nr05495e
Forti, Stiven, et al. "Electronic properties of single-layer tungsten disulfide on epitaxial graphene on silicon carbide." Nanoscale vol. 9,42 (2017): 16412-16419. doi: https://doi.org/10.1039/c7nr05495e
Forti S, Rossi A, Büch H, Cavallucci T, Bisio F, Sala A, Menteş TO, Locatelli A, Magnozzi M, Canepa M, Müller K, Link S, Starke U, Tozzini V, Coletti C. Electronic properties of single-layer tungsten disulfide on epitaxial graphene on silicon carbide. Nanoscale. 2017 Nov 02;9(42):16412-16419. doi: 10.1039/c7nr05495e. PMID: 29058741.
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