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Metal silicide/poly-Si Schottky diodes for uncooled microbolometers.

Nanoscale research letters

Chizh KV, Chapnin VA, Kalinushkin VP, Resnik VY, Storozhevykh MS, Yuryev VA.
PMID: 23594606
Nanoscale Res Lett. 2013 Apr 17;8(1):177. doi: 10.1186/1556-276X-8-177.

: Nickel silicide Schottky diodes formed on polycrystalline Si 〈P〉 films are proposed as temperature sensors of monolithic uncooled microbolometer infrared focal plane arrays. The structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are...

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Chizh KV, Chapnin VA, Kalinushkin VP, et al. Metal silicide/poly-Si Schottky diodes for uncooled microbolometers. Nanoscale Res Lett. 2013;8(1):177doi: 10.1186/1556-276X-8-177.
Chizh, K. V., Chapnin, V. A., Kalinushkin, V. P., Resnik, V. Y., Storozhevykh, M. S., & Yuryev, V. A. (2013). Metal silicide/poly-Si Schottky diodes for uncooled microbolometers. Nanoscale research letters, 8(1), 177. https://doi.org/10.1186/1556-276X-8-177
Chizh, Kirill V, et al. "Metal silicide/poly-Si Schottky diodes for uncooled microbolometers." Nanoscale research letters vol. 8,1 (2013): 177. doi: https://doi.org/10.1186/1556-276X-8-177
Chizh KV, Chapnin VA, Kalinushkin VP, Resnik VY, Storozhevykh MS, Yuryev VA. Metal silicide/poly-Si Schottky diodes for uncooled microbolometers. Nanoscale Res Lett. 2013 Apr 17;8(1):177. doi: 10.1186/1556-276X-8-177. PMID: 23594606; PMCID: PMC3655036.
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Mitochondrial H2O2 as an enable signal for triggering autophosphorylation of insulin receptor in neurons.

Journal of molecular signaling

Persiyantseva NA, Storozhevykh TP, Senilova YE, Gorbacheva LR, Pinelis VG, Pomytkin IA.
PMID: 24094269
J Mol Signal. 2013 Oct 05;8(1):11. doi: 10.1186/1750-2187-8-11.

BACKGROUND: Insulin receptors are widely distributed in the brain, where they play roles in synaptic function, memory formation, and neuroprotection. Autophosphorylation of the receptor in response to insulin stimulation is a critical step in receptor activation. In neurons, insulin...

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Persiyantseva NA, Storozhevykh TP, Senilova YE, et al. Mitochondrial H2O2 as an enable signal for triggering autophosphorylation of insulin receptor in neurons. J Mol Signal. 2013;8(1):11doi: 10.1186/1750-2187-8-11.
Persiyantseva, N. A., Storozhevykh, T. P., Senilova, Y. E., Gorbacheva, L. R., Pinelis, V. G., & Pomytkin, I. A. (2013). Mitochondrial H2O2 as an enable signal for triggering autophosphorylation of insulin receptor in neurons. Journal of molecular signaling, 8(1), 11. https://doi.org/10.1186/1750-2187-8-11
Persiyantseva, Nadezhda A, et al. "Mitochondrial H2O2 as an enable signal for triggering autophosphorylation of insulin receptor in neurons." Journal of molecular signaling vol. 8,1 (2013): 11. doi: https://doi.org/10.1186/1750-2187-8-11
Persiyantseva NA, Storozhevykh TP, Senilova YE, Gorbacheva LR, Pinelis VG, Pomytkin IA. Mitochondrial H2O2 as an enable signal for triggering autophosphorylation of insulin receptor in neurons. J Mol Signal. 2013 Oct 05;8(1):11. doi: 10.1186/1750-2187-8-11. PMID: 24094269; PMCID: PMC3817577.
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Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C.

Nanoscale research letters

Storozhevykh MS, Arapkina LV, Yuryev VA.
PMID: 26177602
Nanoscale Res Lett. 2015 Dec;10(1):994. doi: 10.1186/s11671-015-0994-0. Epub 2015 Jul 16.

UNLABELLED: The article presents an experimental study of an issue of whether the formation of arrays of Ge quantum dots on the Si(001) surface is an equilibrium process or it is kinetically controlled. We deposited Ge on Si(001) at...

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Storozhevykh MS, Arapkina LV, Yuryev VA. Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C. Nanoscale Res Lett. 2015;10(1):994doi: 10.1186/s11671-015-0994-0.
Storozhevykh, M. S., Arapkina, L. V., & Yuryev, V. A. (2015). Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C. Nanoscale research letters, 10(1), 994. https://doi.org/10.1186/s11671-015-0994-0
Storozhevykh, Mikhail S, et al. "Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C." Nanoscale research letters vol. 10,1 (2015): 994. doi: https://doi.org/10.1186/s11671-015-0994-0
Storozhevykh MS, Arapkina LV, Yuryev VA. Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C. Nanoscale Res Lett. 2015 Dec;10(1):994. doi: 10.1186/s11671-015-0994-0. Epub 2015 Jul 16. PMID: 26177602; PMCID: PMC4503702.
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Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity.

Nanoscale research letters

Yuryev VA, Arapkina LV, Storozhevykh MS, Chapnin VA, Chizh KV, Uvarov OV, Kalinushkin VP, Zhukova ES, Prokhorov AS, Spektor IE, Gorshunov BP.
PMID: 22824144
Nanoscale Res Lett. 2012 Jul 23;7(1):414. doi: 10.1186/1556-276X-7-414.

: Issues of Ge hut cluster array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Dynamics of the RHEED patterns in...

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Yuryev VA, Arapkina LV, Storozhevykh MS, et al. Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity. Nanoscale Res Lett. 2012;7(1):414doi: 10.1186/1556-276X-7-414.
Yuryev, V. A., Arapkina, L. V., Storozhevykh, M. S., Chapnin, V. A., Chizh, K. V., Uvarov, O. V., Kalinushkin, V. P., Zhukova, E. S., Prokhorov, A. S., Spektor, I. E., & Gorshunov, B. P. (2012). Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity. Nanoscale research letters, 7(1), 414. https://doi.org/10.1186/1556-276X-7-414
Yuryev, Vladimir A, et al. "Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity." Nanoscale research letters vol. 7,1 (2012): 414. doi: https://doi.org/10.1186/1556-276X-7-414
Yuryev VA, Arapkina LV, Storozhevykh MS, Chapnin VA, Chizh KV, Uvarov OV, Kalinushkin VP, Zhukova ES, Prokhorov AS, Spektor IE, Gorshunov BP. Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity. Nanoscale Res Lett. 2012 Jul 23;7(1):414. doi: 10.1186/1556-276X-7-414. PMID: 22824144; PMCID: PMC3466158.
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Showing 1 to 4 of 4 entries