Cite
Bioud YA, Boucherif A, Belarouci A, et al. Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs. Nanoscale Res Lett. 2016;11(1):446doi: 10.1186/s11671-016-1642-z.
Bioud, Y. A., Boucherif, A., Belarouci, A., Paradis, E., Drouin, D., & Arès, R. (2016). Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs. Nanoscale research letters, 11(1), 446. https://doi.org/10.1186/s11671-016-1642-z
Bioud, Youcef A, et al. "Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs." Nanoscale research letters vol. 11,1 (2016): 446. doi: https://doi.org/10.1186/s11671-016-1642-z
Bioud YA, Boucherif A, Belarouci A, Paradis E, Drouin D, Arès R. Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs. Nanoscale Res Lett. 2016 Dec;11(1):446. doi: 10.1186/s11671-016-1642-z. Epub 2016 Oct 04. PMID: 27704487; PMCID: PMC5050177.
Copy
Download .nbib