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Heo J, Jeong H, Cho Y, et al. Reconfigurable van der Waals Heterostructured Devices with Metal-Insulator Transition. Nano Lett. 2016;16(11):6746-6754doi: 10.1021/acs.nanolett.6b02199.
Heo, J., Jeong, H., Cho, Y., Lee, J., Lee, K., Nam, S., Lee, E. K., Lee, S., Lee, H., Hwang, S., & Park, S. (2016). Reconfigurable van der Waals Heterostructured Devices with Metal-Insulator Transition. Nano letters, 16(11), 6746-6754. https://doi.org/10.1021/acs.nanolett.6b02199
Heo, Jinseong, et al. "Reconfigurable van der Waals Heterostructured Devices with Metal-Insulator Transition." Nano letters vol. 16,11 (2016): 6746-6754. doi: https://doi.org/10.1021/acs.nanolett.6b02199
Heo J, Jeong H, Cho Y, Lee J, Lee K, Nam S, Lee EK, Lee S, Lee H, Hwang S, Park S. Reconfigurable van der Waals Heterostructured Devices with Metal-Insulator Transition. Nano Lett. 2016 Nov 09;16(11):6746-6754. doi: 10.1021/acs.nanolett.6b02199. Epub 2016 Oct 05. PMID: 27704847.
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Nano Lett. 2016 Nov 09;16(11):6746-6754. doi: 10.1021/acs.nanolett.6b02199. Epub 2016 Oct 05.

Reconfigurable van der Waals Heterostructured Devices with Metal-Insulator Transition.

Nano letters

Jinseong Heo, Heejeong Jeong, Yeonchoo Cho, Jaeho Lee, Kiyoung Lee, Seunggeol Nam, Eun-Kyu Lee, Sangyeob Lee, Hyangsook Lee, Sungwoo Hwang, Seongjun Park

Affiliations

  1. Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon-si 16678, Korea.

PMID: 27704847 DOI: 10.1021/acs.nanolett.6b02199

Abstract

Atomically thin two-dimensional (2D) materials range from semimetallic graphene to insulating hexagonal boron nitride to semiconducting transition-metal dichalcogenides. Recently, metal-insulator-semiconductor field effect transistors built from these 2D elements were studied for flexible and transparent electronics. However, to induce ambipolar characteristics for alternative power-efficient circuitry, ion-gel gating is often employed for high capacitive coupling, limiting stable operation at ambient conditions. Here, we report reconfigurable MoTe

Keywords: MoTe2; metal−insulator transition; reconfigurable; tunneling photocurrent; van der Waals heterostructures

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