Composition determination for quaternary III-V semiconductors by aberration-corrected STEM. Beyer A, Duschek L, Oelerich JO, Volz K. L Duschek, A Beyer, JO Oelerich, K Volz - archiv.ub.uni-marburg.de GSID: mHkwZrSoso8J
Characterization of III/V Semiconductors on Silicon by Analyzing 4D-STEM Data with Convolutional Neural Networks. Belz J, Beyer A. D Heimes, J Scheunert, A Beyer, J Belz… - Microscopy and …, 2021 - cambridge.org GSID: l4RJI5qPV8oJ
Correlative HAADF-STEM and EDX-STEM Tomography for the 3D Morphological and Elemental Analysis of FinFET Semiconductor Devices. Jacob M, Sanders T. J Sorel, M Jacob, T Sanders, A Grenier… - Microscopy and …, 2018 - cambridge.org GSID: kAn0qyqrd8EJ