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Zou X, Huang CW, Wang L, et al. Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors. Adv Mater. 2016;28(10):2062-9doi: 10.1002/adma.201505205.
Zou, X., Huang, C. W., Wang, L., Yin, L. J., Li, W., Wang, J., Wu, B., Liu, Y., Yao, Q., Jiang, C., Wu, W. W., He, L., Chen, S., Ho, J. C., & Liao, L. (2016). Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors. Advanced materials (Deerfield Beach, Fla.), 28(10), 2062-9. https://doi.org/10.1002/adma.201505205
Zou, Xuming, et al. "Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors." Advanced materials (Deerfield Beach, Fla.) vol. 28,10 (2016): 2062-9. doi: https://doi.org/10.1002/adma.201505205
Zou X, Huang CW, Wang L, Yin LJ, Li W, Wang J, Wu B, Liu Y, Yao Q, Jiang C, Wu WW, He L, Chen S, Ho JC, Liao L. Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors. Adv Mater. 2016 Mar 09;28(10):2062-9. doi: 10.1002/adma.201505205. Epub 2016 Jan 13. PMID: 26762171.
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