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Kwon H, Lee K, Heo J, et al. Characterization of Edge Contact: Atomically Resolved Semiconductor-Metal Lateral Boundary in MoS. Adv Mater. 2017;29(41)doi: 10.1002/adma.201702931.
Kwon, H., Lee, K., Heo, J., Oh, Y., Lee, H., Appalakondaiah, S., Ko, W., Kim, H. W., Jung, J. W., Suh, H., Min, H., Jeon, I., Hwang, E., & Hwang, S. (2017). Characterization of Edge Contact: Atomically Resolved Semiconductor-Metal Lateral Boundary in MoS. Advanced materials (Deerfield Beach, Fla.), 29(41), . https://doi.org/10.1002/adma.201702931
Kwon, Hyeokshin, et al. "Characterization of Edge Contact: Atomically Resolved Semiconductor-Metal Lateral Boundary in MoS." Advanced materials (Deerfield Beach, Fla.) vol. 29,41 (2017). doi: https://doi.org/10.1002/adma.201702931
Kwon H, Lee K, Heo J, Oh Y, Lee H, Appalakondaiah S, Ko W, Kim HW, Jung JW, Suh H, Min H, Jeon I, Hwang E, Hwang S. Characterization of Edge Contact: Atomically Resolved Semiconductor-Metal Lateral Boundary in MoS. Adv Mater. 2017 Nov;29(41). doi: 10.1002/adma.201702931. Epub 2017 Sep 18. PMID: 28922484.
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