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Al Saqri NA, Felix JF, Aziz M, et al. Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique. Nanotechnology. 2016;28(4):045707doi: 10.1088/1361-6528/28/4/045707.
Al Saqri, N. A., Felix, J. F., Aziz, M., Kunets, V. P., Jameel, D., Taylor, D., Henini, M., Abd El-Sadek, M. S., Furrow, C., Ware, M. E., Benamara, M., Mortazavi, M., & Salamo, G. (2017). Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique. Nanotechnology, 28(4), 045707. https://doi.org/10.1088/1361-6528/28/4/045707
Al Saqri, Noor Alhuda, et al. "Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique." Nanotechnology vol. 28,4 (2017): 045707. doi: https://doi.org/10.1088/1361-6528/28/4/045707
Al Saqri NA, Felix JF, Aziz M, Kunets VP, Jameel D, Taylor D, Henini M, Abd El-Sadek MS, Furrow C, Ware ME, Benamara M, Mortazavi M, Salamo G. Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique. Nanotechnology. 2017 Jan 27;28(4):045707. doi: 10.1088/1361-6528/28/4/045707. Epub 2016 Dec 20. PMID: 27997370.
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