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Showing 1 to 12 of 229 entries
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Partial characterization of two stable auxotrophic cell strains of Datura innoxia Mill.

Planta

King J, Horsch RB, Savage AD.
PMID: 24306477
Planta. 1980 Oct;149(5):480-4. doi: 10.1007/BF00385752.

A growth analysis of several presumptive "leaky" auxotrophs from Datura innoxia suspension cultures led to the discovery of an adenine-requiring cultures led to the discovery of an adenine-requiring cell strain (Ad1). Both Ad1 and Pn1, a pantothenate-requiring strain isolated...

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King J, Horsch RB, Savage AD. Partial characterization of two stable auxotrophic cell strains of Datura innoxia Mill. Planta. 1980;149(5):480-4doi: 10.1007/BF00385752.
King, J., Horsch, R. B., & Savage, A. D. (1980). Partial characterization of two stable auxotrophic cell strains of Datura innoxia Mill. Planta, 149(5), 480-4. https://doi.org/10.1007/BF00385752
King, J, et al. "Partial characterization of two stable auxotrophic cell strains of Datura innoxia Mill." Planta vol. 149,5 (1980): 480-4. doi: https://doi.org/10.1007/BF00385752
King J, Horsch RB, Savage AD. Partial characterization of two stable auxotrophic cell strains of Datura innoxia Mill. Planta. 1980 Oct;149(5):480-4. doi: 10.1007/BF00385752. PMID: 24306477.
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Silicon Nanomembranes with Hybrid Crystal Orientations and Strain States.

ACS applied materials & interfaces

Scott SA, Deneke C, Paskiewicz DM, Ryu HJ, Malachias A, Baunack S, Schmidt OG, Savage DE, Eriksson MA, Lagally MG.
PMID: 29129058
ACS Appl Mater Interfaces. 2017 Dec 06;9(48):42372-42382. doi: 10.1021/acsami.7b14291. Epub 2017 Nov 27.

Methods to integrate different crystal orientations, strain states, and compositions of semiconductors in planar and preferably flexible configurations may enable nontraditional sensing-, stimulating-, or communication-device applications. We combine crystalline-silicon nanomembranes, patterning, membrane transfer, and epitaxial growth to demonstrate planar...

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Scott SA, Deneke C, Paskiewicz DM, et al. Silicon Nanomembranes with Hybrid Crystal Orientations and Strain States. ACS Appl Mater Interfaces. 2017;9(48):42372-42382doi: 10.1021/acsami.7b14291.
Scott, S. A., Deneke, C., Paskiewicz, D. M., Ryu, H. J., Malachias, A., Baunack, S., Schmidt, O. G., Savage, D. E., Eriksson, M. A., & Lagally, M. G. (2017). Silicon Nanomembranes with Hybrid Crystal Orientations and Strain States. ACS applied materials & interfaces, 9(48), 42372-42382. https://doi.org/10.1021/acsami.7b14291
Scott, Shelley A, et al. "Silicon Nanomembranes with Hybrid Crystal Orientations and Strain States." ACS applied materials & interfaces vol. 9,48 (2017): 42372-42382. doi: https://doi.org/10.1021/acsami.7b14291
Scott SA, Deneke C, Paskiewicz DM, Ryu HJ, Malachias A, Baunack S, Schmidt OG, Savage DE, Eriksson MA, Lagally MG. Silicon Nanomembranes with Hybrid Crystal Orientations and Strain States. ACS Appl Mater Interfaces. 2017 Dec 06;9(48):42372-42382. doi: 10.1021/acsami.7b14291. Epub 2017 Nov 27. PMID: 29129058.
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Identifying single electron charge sensor events using wavelet edge detection.

Nanotechnology

Prance JR, Van Bael BJ, Simmons CB, Savage DE, Lagally MG, Friesen M, Coppersmith SN, Eriksson MA.
PMID: 25930073
Nanotechnology. 2015 May 29;26(21):215201. doi: 10.1088/0957-4484/26/21/215201. Epub 2015 May 01.

The operation of solid-state qubits often relies on single-shot readout using a nanoelectronic charge sensor, and the detection of events in a noisy sensor signal is crucial for high fidelity readout of such qubits. The most common detection scheme,...

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Prance JR, Van Bael BJ, Simmons CB, et al. Identifying single electron charge sensor events using wavelet edge detection. Nanotechnology. 2015;26(21):215201doi: 10.1088/0957-4484/26/21/215201.
Prance, J. R., Van Bael, B. J., Simmons, C. B., Savage, D. E., Lagally, M. G., Friesen, M., Coppersmith, S. N., & Eriksson, M. A. (2015). Identifying single electron charge sensor events using wavelet edge detection. Nanotechnology, 26(21), 215201. https://doi.org/10.1088/0957-4484/26/21/215201
Prance, J R, et al. "Identifying single electron charge sensor events using wavelet edge detection." Nanotechnology vol. 26,21 (2015): 215201. doi: https://doi.org/10.1088/0957-4484/26/21/215201
Prance JR, Van Bael BJ, Simmons CB, Savage DE, Lagally MG, Friesen M, Coppersmith SN, Eriksson MA. Identifying single electron charge sensor events using wavelet edge detection. Nanotechnology. 2015 May 29;26(21):215201. doi: 10.1088/0957-4484/26/21/215201. Epub 2015 May 01. PMID: 25930073.
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Second-Harmonic Coherent Driving of a Spin Qubit in a Si/SiGe Quantum Dot.

Physical review letters

Scarlino P, Kawakami E, Ward DR, Savage DE, Lagally MG, Friesen M, Coppersmith SN, Eriksson MA, Vandersypen LM.
PMID: 26382693
Phys Rev Lett. 2015 Sep 04;115(10):106802. doi: 10.1103/PhysRevLett.115.106802. Epub 2015 Sep 01.

We demonstrate coherent driving of a single electron spin using second-harmonic excitation in a Si/SiGe quantum dot. Our estimates suggest that the anharmonic dot confining potential combined with a gradient in the transverse magnetic field dominates the second-harmonic response....

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Scarlino P, Kawakami E, Ward DR, et al. Second-Harmonic Coherent Driving of a Spin Qubit in a Si/SiGe Quantum Dot. Phys Rev Lett. 2015;115(10):106802doi: 10.1103/PhysRevLett.115.106802.
Scarlino, P., Kawakami, E., Ward, D. R., Savage, D. E., Lagally, M. G., Friesen, M., Coppersmith, S. N., Eriksson, M. A., & Vandersypen, L. M. (2015). Second-Harmonic Coherent Driving of a Spin Qubit in a Si/SiGe Quantum Dot. Physical review letters, 115(10), 106802. https://doi.org/10.1103/PhysRevLett.115.106802
Scarlino, P, et al. "Second-Harmonic Coherent Driving of a Spin Qubit in a Si/SiGe Quantum Dot." Physical review letters vol. 115,10 (2015): 106802. doi: https://doi.org/10.1103/PhysRevLett.115.106802
Scarlino P, Kawakami E, Ward DR, Savage DE, Lagally MG, Friesen M, Coppersmith SN, Eriksson MA, Vandersypen LM. Second-Harmonic Coherent Driving of a Spin Qubit in a Si/SiGe Quantum Dot. Phys Rev Lett. 2015 Sep 04;115(10):106802. doi: 10.1103/PhysRevLett.115.106802. Epub 2015 Sep 01. PMID: 26382693.
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Intergenerational Efforts to Develop a Healthy Environment for Everyone: Sustainability as a Human Rights Issue.

International journal of aging & human development

Kruger TM, Savage CE, Newsham P.
PMID: 26215297
Int J Aging Hum Dev. 2014 Dec;80(1):27-40. doi: 10.1177/0091415015591108.

As climate change proceeds at an unprecedented rate, concern for the natural environment has increased. The world's population aging also continues to rise at an unprecedented rate, giving greater attention to the implications of an older population. The two...

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Kruger TM, Savage CE, Newsham P. Intergenerational Efforts to Develop a Healthy Environment for Everyone: Sustainability as a Human Rights Issue. Int J Aging Hum Dev. 2014;80(1):27-40doi: 10.1177/0091415015591108.
Kruger, T. M., Savage, C. E., & Newsham, P. (2014). Intergenerational Efforts to Develop a Healthy Environment for Everyone: Sustainability as a Human Rights Issue. International journal of aging & human development, 80(1), 27-40. https://doi.org/10.1177/0091415015591108
Kruger, Tina M, et al. "Intergenerational Efforts to Develop a Healthy Environment for Everyone: Sustainability as a Human Rights Issue." International journal of aging & human development vol. 80,1 (2014): 27-40. doi: https://doi.org/10.1177/0091415015591108
Kruger TM, Savage CE, Newsham P. Intergenerational Efforts to Develop a Healthy Environment for Everyone: Sustainability as a Human Rights Issue. Int J Aging Hum Dev. 2014 Dec;80(1):27-40. doi: 10.1177/0091415015591108. PMID: 26215297.
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Ethyl and isopropyl 4-ferrocenyl-benzoate.

Acta crystallographica. Section C, Crystal structure communications

Anderson FP, Gallagher JF, Kenny PT, Ryan C, Savage D.
PMID: 12506215
Acta Crystallogr C. 2003 Jan;59:m13-5. doi: 10.1107/s0108270102021819. Epub 2002 Dec 10.

The title compounds, [Fe(C(5)H(5))(C(14)H(13)O(2))] and [Fe(C(5)H(5))(C(15)H(15)O(2))], respectively, contain the ferrocenyl eta(5)(C(5)H(4)) and phenylene -C(6)H(4)- rings in a nearly coplanar arrangement, with interplanar angles of 6.88 (12) and 10.5 (2) degrees, respectively. Molecules of the ethyl ester form dimers through...

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Anderson FP, Gallagher JF, Kenny PT, et al. Ethyl and isopropyl 4-ferrocenyl-benzoate. Acta Crystallogr C. 2002;59:m13-5doi: 10.1107/s0108270102021819.
Anderson, F. P., Gallagher, J. F., Kenny, P. T., Ryan, C., & Savage, D. (2003). Ethyl and isopropyl 4-ferrocenyl-benzoate. Acta crystallographica. Section C, Crystal structure communications, 59m13-5. https://doi.org/10.1107/s0108270102021819
Anderson, Frankie P, et al. "Ethyl and isopropyl 4-ferrocenyl-benzoate." Acta crystallographica. Section C, Crystal structure communications vol. 59 (2003): m13-5. doi: https://doi.org/10.1107/s0108270102021819
Anderson FP, Gallagher JF, Kenny PT, Ryan C, Savage D. Ethyl and isopropyl 4-ferrocenyl-benzoate. Acta Crystallogr C. 2003 Jan;59:m13-5. doi: 10.1107/s0108270102021819. Epub 2002 Dec 10. PMID: 12506215.
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Nanomechanics: response of a strained semiconductor structure.

Nature

Liu F, Rugheimer P, Mateeva E, Savage DE, Lagally MG.
PMID: 11932735
Nature. 2002 Apr 04;416(6880):498. doi: 10.1038/416498a.

The nanomechanical properties of thin silicon films will become increasingly critical in semiconductor devices, particularly in the context of substrates that consist of a silicon film on an insulating layer (known as silicon-on-insulator, or SOI, substrates). Here we use...

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Liu F, Rugheimer P, Mateeva E, et al. Nanomechanics: response of a strained semiconductor structure. Nature. 2002;416(6880):498doi: 10.1038/416498a.
Liu, F., Rugheimer, P., Mateeva, E., Savage, D. E., & Lagally, M. G. (2002). Nanomechanics: response of a strained semiconductor structure. Nature, 416(6880), 498. https://doi.org/10.1038/416498a
Liu, Feng, et al. "Nanomechanics: response of a strained semiconductor structure." Nature vol. 416,6880 (2002): 498. doi: https://doi.org/10.1038/416498a
Liu F, Rugheimer P, Mateeva E, Savage DE, Lagally MG. Nanomechanics: response of a strained semiconductor structure. Nature. 2002 Apr 04;416(6880):498. doi: 10.1038/416498a. PMID: 11932735.
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Clostridium sordellii toxic shock syndrome: a case report and review of the literature.

Infectious diseases in obstetrics and gynecology

Sosolik RC, Savage BA, Vaccarello L.
PMID: 18476062
Infect Dis Obstet Gynecol. 1996;4(1):31-5. doi: 10.1155/S1064744996000087.

BACKGROUND: Since the 1980s, there have been isolated reports of a toxic shock syndrome associated with Clostridium sordellii necrotizing subcutaneous infections during the puerperium. Relatively localized fascial and muscle necrosis is noted at the surgical incision sites. However, circulating...

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Sosolik RC, Savage BA, Vaccarello L. Clostridium sordellii toxic shock syndrome: a case report and review of the literature. Infect Dis Obstet Gynecol. 1996;4(1):31-5doi: 10.1155/S1064744996000087.
Sosolik, R. C., Savage, B. A., & Vaccarello, L. (1996). Clostridium sordellii toxic shock syndrome: a case report and review of the literature. Infectious diseases in obstetrics and gynecology, 4(1), 31-5. https://doi.org/10.1155/S1064744996000087
Sosolik, R C, et al. "Clostridium sordellii toxic shock syndrome: a case report and review of the literature." Infectious diseases in obstetrics and gynecology vol. 4,1 (1996): 31-5. doi: https://doi.org/10.1155/S1064744996000087
Sosolik RC, Savage BA, Vaccarello L. Clostridium sordellii toxic shock syndrome: a case report and review of the literature. Infect Dis Obstet Gynecol. 1996;4(1):31-5. doi: 10.1155/S1064744996000087. PMID: 18476062; PMCID: PMC2364462.
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Orbiting astronomical observatory: review of scientific results.

Science (New York, N.Y.)

Code AD, Savage BD.
PMID: 17815613
Science. 1972 Jul 21;177(4045):213-21. doi: 10.1126/science.177.4045.213.

No abstract available.

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Code AD, Savage BD. Orbiting astronomical observatory: review of scientific results. Science. 1972;177(4045):213-21doi: 10.1126/science.177.4045.213.
Code, A. D., & Savage, B. D. (1972). Orbiting astronomical observatory: review of scientific results. Science (New York, N.Y.), 177(4045), 213-21. https://doi.org/10.1126/science.177.4045.213
Code, A D, and Savage, B D. "Orbiting astronomical observatory: review of scientific results." Science (New York, N.Y.) vol. 177,4045 (1972): 213-21. doi: https://doi.org/10.1126/science.177.4045.213
Code AD, Savage BD. Orbiting astronomical observatory: review of scientific results. Science. 1972 Jul 21;177(4045):213-21. doi: 10.1126/science.177.4045.213. PMID: 17815613.
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Anthropoid origins in Asia? New discovery of amphipithecus from the eocene of burma.

Science (New York, N.Y.)

Ciochon RL, Savage DE, Tint T, Maw B.
PMID: 17841497
Science. 1985 Aug 23;229(4715):756-9. doi: 10.1126/science.229.4715.756.

A new fossil of the primate Amphipithecus mogaungensis Colbert from the late Eocene of Burma shows that this species has a mandibular and molar morphology very similar to Oligocene and post-Oligocene higher primates. It has an exceptionally deep jaw....

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Ciochon RL, Savage DE, Tint T, et al. Anthropoid origins in Asia? New discovery of amphipithecus from the eocene of burma. Science. 1985;229(4715):756-9doi: 10.1126/science.229.4715.756.
Ciochon, R. L., Savage, D. E., Tint, T., & Maw, B. (1985). Anthropoid origins in Asia? New discovery of amphipithecus from the eocene of burma. Science (New York, N.Y.), 229(4715), 756-9. https://doi.org/10.1126/science.229.4715.756
Ciochon, R L, et al. "Anthropoid origins in Asia? New discovery of amphipithecus from the eocene of burma." Science (New York, N.Y.) vol. 229,4715 (1985): 756-9. doi: https://doi.org/10.1126/science.229.4715.756
Ciochon RL, Savage DE, Tint T, Maw B. Anthropoid origins in Asia? New discovery of amphipithecus from the eocene of burma. Science. 1985 Aug 23;229(4715):756-9. doi: 10.1126/science.229.4715.756. PMID: 17841497.
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Defect-free single-crystal SiGe: a new material from nanomembrane strain engineering.

ACS nano

Paskiewicz DM, Tanto B, Savage DE, Lagally MG.
PMID: 21650206
ACS Nano. 2011 Jul 26;5(7):5814-22. doi: 10.1021/nn201547k. Epub 2011 Jun 16.

Many important materials cannot be grown as single crystals in bulk form because strain destroys long-range crystallinity. Among them, alloys of group IV semiconductors, specifically SiGe alloys, have significant technological value. Using nanomembrane strain engineering methods, we demonstrate the...

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Paskiewicz DM, Tanto B, Savage DE, et al. Defect-free single-crystal SiGe: a new material from nanomembrane strain engineering. ACS Nano. 2011;5(7):5814-22doi: 10.1021/nn201547k.
Paskiewicz, D. M., Tanto, B., Savage, D. E., & Lagally, M. G. (2011). Defect-free single-crystal SiGe: a new material from nanomembrane strain engineering. ACS nano, 5(7), 5814-22. https://doi.org/10.1021/nn201547k
Paskiewicz, Deborah M, et al. "Defect-free single-crystal SiGe: a new material from nanomembrane strain engineering." ACS nano vol. 5,7 (2011): 5814-22. doi: https://doi.org/10.1021/nn201547k
Paskiewicz DM, Tanto B, Savage DE, Lagally MG. Defect-free single-crystal SiGe: a new material from nanomembrane strain engineering. ACS Nano. 2011 Jul 26;5(7):5814-22. doi: 10.1021/nn201547k. Epub 2011 Jun 16. PMID: 21650206.
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Engineering (M).

Science (New York, N.Y.)

Savage CF.
PMID: 17793591
Science. 1965 Feb 19;147(3660):927. doi: 10.1126/science.147.3660.927.

No abstract available.

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Savage CF. Engineering (M). Science. 1965;147(3660):927doi: 10.1126/science.147.3660.927.
Savage, C. F. (1965). Engineering (M). Science (New York, N.Y.), 147(3660), 927. https://doi.org/10.1126/science.147.3660.927
Savage, C F. "Engineering (M)." Science (New York, N.Y.) vol. 147,3660 (1965): 927. doi: https://doi.org/10.1126/science.147.3660.927
Savage CF. Engineering (M). Science. 1965 Feb 19;147(3660):927. doi: 10.1126/science.147.3660.927. PMID: 17793591.
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Showing 1 to 12 of 229 entries