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Zhang H, Ke F, Li Y, et al. Anomalous Structural Transition and Electrical Transport Behaviors in Compressed Zn2SnO4: Effect of Interface. Sci Rep. 2015;5:14417doi: 10.1038/srep14417.
Zhang, H., Ke, F., Li, Y., Wang, L., Liu, C., Zeng, Y., Yao, M., Han, Y., Ma, Y., & Gao, C. (2015). Anomalous Structural Transition and Electrical Transport Behaviors in Compressed Zn2SnO4: Effect of Interface. Scientific reports, 514417. https://doi.org/10.1038/srep14417
Zhang, Haiwa, et al. "Anomalous Structural Transition and Electrical Transport Behaviors in Compressed Zn2SnO4: Effect of Interface." Scientific reports vol. 5 (2015): 14417. doi: https://doi.org/10.1038/srep14417
Zhang H, Ke F, Li Y, Wang L, Liu C, Zeng Y, Yao M, Han Y, Ma Y, Gao C. Anomalous Structural Transition and Electrical Transport Behaviors in Compressed Zn2SnO4: Effect of Interface. Sci Rep. 2015 Sep 24;5:14417. doi: 10.1038/srep14417. PMID: 26399167; PMCID: PMC4585851.
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Sci Rep. 2015 Sep 24;5:14417. doi: 10.1038/srep14417.

Anomalous Structural Transition and Electrical Transport Behaviors in Compressed Zn2SnO4: Effect of Interface.

Scientific reports

Haiwa Zhang, Feng Ke, Yan Li, Li Wang, Cailong Liu, Yi Zeng, Mingguang Yao, Yonghao Han, Yanzhang Ma, Chunxiao Gao

Affiliations

  1. State Key Lab for Superhard Materials, Institute of Atomic and Molecular Physics and Department of Materials Science, Jilin University, Changchun 130012, China.
  2. Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China.
  3. Department of Mechanical Engineering, Texas Tech University, Lubbock, TX 79409, USA.

PMID: 26399167 PMCID: PMC4585851 DOI: 10.1038/srep14417

Abstract

The interface effect is one of the most important factors that strongly affect the structural transformations and the properties of nano-/submicro-crystals under pressure. However, characterization of the granular boundary changes in materials is always challenging. Here, using tetrakaidecahedral Zn2SnO4 microcrystals as an example, we employed alternating current impedance, X-ray diffraction methods and transmission electron microscopy to elucidate the effect of the interface on the structure and electrical transport behavior of the Zn2SnO4 material under pressure. We clearly show that grain refinement of the initial microcrystals into nanocrystals (approximately 5 nm) occurs at above 12.5 GPa and is characterized by an anomalous resistance variation without a structural phase transition. A new phase transition pathway from the cubic to hexagonal structure occurs at approximately 29.8 GPa in Zn2SnO4. The unexpected grain refinement may explain the new structural transition in Zn2SnO4, which is different from the previous theoretical prediction. Our results provide new insights into the link between the structural transition, interface changes and electrical transport properties of Zn2SnO4.

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