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Niu G, Capellini G, Hatami F, et al. Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure. ACS Appl Mater Interfaces. 2016;8(40):26948-26955doi: 10.1021/acsami.6b09592.
Niu, G., Capellini, G., Hatami, F., Di Bartolomeo, A., Niermann, T., Hussein, E. H., Schubert, M. A., Krause, H. M., Zaumseil, P., Skibitzki, O., Lupina, G., Masselink, W. T., Lehmann, M., Xie, Y. H., & Schroeder, T. (2016). Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure. ACS applied materials & interfaces, 8(40), 26948-26955. https://doi.org/10.1021/acsami.6b09592
Niu, Gang, et al. "Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure." ACS applied materials & interfaces vol. 8,40 (2016): 26948-26955. doi: https://doi.org/10.1021/acsami.6b09592
Niu G, Capellini G, Hatami F, Di Bartolomeo A, Niermann T, Hussein EH, Schubert MA, Krause HM, Zaumseil P, Skibitzki O, Lupina G, Masselink WT, Lehmann M, Xie YH, Schroeder T. Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure. ACS Appl Mater Interfaces. 2016 Oct 12;8(40):26948-26955. doi: 10.1021/acsami.6b09592. Epub 2016 Sep 28. PMID: 27642767.
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