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Roy A, Movva HC, Satpati B, et al. Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy. ACS Appl Mater Interfaces. 2016;8(11):7396-402doi: 10.1021/acsami.6b00961.
Roy, A., Movva, H. C., Satpati, B., Kim, K., Dey, R., Rai, A., Pramanik, T., Guchhait, S., Tutuc, E., & Banerjee, S. K. (2016). Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy. ACS applied materials & interfaces, 8(11), 7396-402. https://doi.org/10.1021/acsami.6b00961
Roy, Anupam, et al. "Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy." ACS applied materials & interfaces vol. 8,11 (2016): 7396-402. doi: https://doi.org/10.1021/acsami.6b00961
Roy A, Movva HC, Satpati B, Kim K, Dey R, Rai A, Pramanik T, Guchhait S, Tutuc E, Banerjee SK. Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy. ACS Appl Mater Interfaces. 2016 Mar 23;8(11):7396-402. doi: 10.1021/acsami.6b00961. Epub 2016 Mar 11. PMID: 26939890.
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