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Huang P, Zong H, Shi JJ, et al. Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect. ACS Nano. 2015;9(9):9276-83doi: 10.1021/acsnano.5b04158.
Huang, P., Zong, H., Shi, J. J., Zhang, M., Jiang, X. H., Zhong, H. X., Ding, Y. M., He, Y. P., Lu, J., & Hu, X. D. (2015). Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect. ACS nano, 9(9), 9276-83. https://doi.org/10.1021/acsnano.5b04158
Huang, Pu, et al. "Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect." ACS nano vol. 9,9 (2015): 9276-83. doi: https://doi.org/10.1021/acsnano.5b04158
Huang P, Zong H, Shi JJ, Zhang M, Jiang XH, Zhong HX, Ding YM, He YP, Lu J, Hu XD. Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect. ACS Nano. 2015 Sep 22;9(9):9276-83. doi: 10.1021/acsnano.5b04158. Epub 2015 Aug 26. PMID: 26301765.
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