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Strain Engineering a 4.

Physical review materials

Zhang D, Ha J, Baek H, Chan YH, Natterer FD, Myers AF, Schumacher JD, Cullen WG, Davydov AV, Kuk Y, Chou MY, Zhitenev NB, Stroscio JA.
PMID: 28890947
Phys Rev Mater. 2017 Jul;1(2). doi: 10.1103/PhysRevMaterials.1.024005. Epub 2017 Jul 19.

We report a rectangular charge density wave (CDW) phase in strained 1T-VSe

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Zhang D, Ha J, Baek H, et al. Strain Engineering a 4. Phys Rev Mater. 2017;1(2)doi: 10.1103/PhysRevMaterials.1.024005.
Zhang, D., Ha, J., Baek, H., Chan, Y. H., Natterer, F. D., Myers, A. F., Schumacher, J. D., Cullen, W. G., Davydov, A. V., Kuk, Y., Chou, M. Y., Zhitenev, N. B., & Stroscio, J. A. (2017). Strain Engineering a 4. Physical review materials, 1(2), . https://doi.org/10.1103/PhysRevMaterials.1.024005
Zhang, Duming, et al. "Strain Engineering a 4." Physical review materials vol. 1,2 (2017). doi: https://doi.org/10.1103/PhysRevMaterials.1.024005
Zhang D, Ha J, Baek H, Chan YH, Natterer FD, Myers AF, Schumacher JD, Cullen WG, Davydov AV, Kuk Y, Chou MY, Zhitenev NB, Stroscio JA. Strain Engineering a 4. Phys Rev Mater. 2017 Jul;1(2). doi: 10.1103/PhysRevMaterials.1.024005. Epub 2017 Jul 19. PMID: 28890947; PMCID: PMC5590663.
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Near-theoretical fracture strengths in native and oxidized silicon nanowires.

Nanotechnology

DelRio FW, White RM, Krylyuk S, Davydov AV, Friedman LH, Cook RF.
PMID: 27325151
Nanotechnology. 2016 Aug 05;27(31):31LT02. doi: 10.1088/0957-4484/27/31/31LT02. Epub 2016 Jun 21.

In this letter, fracture strengths σ f of native and oxidized silicon nanowires (SiNWs) were determined via atomic force microscopy bending experiments and nonlinear finite element analysis. In the native SiNWs, σ f in the Si was comparable to...

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DelRio FW, White RM, Krylyuk S, et al. Near-theoretical fracture strengths in native and oxidized silicon nanowires. Nanotechnology. 2016;27(31):31LT02doi: 10.1088/0957-4484/27/31/31LT02.
DelRio, F. W., White, R. M., Krylyuk, S., Davydov, A. V., Friedman, L. H., & Cook, R. F. (2016). Near-theoretical fracture strengths in native and oxidized silicon nanowires. Nanotechnology, 27(31), 31LT02. https://doi.org/10.1088/0957-4484/27/31/31LT02
DelRio, Frank W, et al. "Near-theoretical fracture strengths in native and oxidized silicon nanowires." Nanotechnology vol. 27,31 (2016): 31LT02. doi: https://doi.org/10.1088/0957-4484/27/31/31LT02
DelRio FW, White RM, Krylyuk S, Davydov AV, Friedman LH, Cook RF. Near-theoretical fracture strengths in native and oxidized silicon nanowires. Nanotechnology. 2016 Aug 05;27(31):31LT02. doi: 10.1088/0957-4484/27/31/31LT02. Epub 2016 Jun 21. PMID: 27325151.
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Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS.

Chemistry of materials : a publication of the American Chemical Society

Kalanyan B, Kimes WA, Beams R, Stranick SJ, Garratt E, Kalish I, Davydov AV, Kanjolia RK, Maslar JE.
PMID: 29545674
Chem Mater. 2017 Aug 08;29(15):6279-6288. doi: 10.1021/acs.chemmater.7b01367. Epub 2017 Jul 12.

High volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultra-thin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largely relied upon sublimation and transport...

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Kalanyan B, Kimes WA, Beams R, et al. Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS. Chem Mater. 2017;29(15):6279-6288doi: 10.1021/acs.chemmater.7b01367.
Kalanyan, B., Kimes, W. A., Beams, R., Stranick, S. J., Garratt, E., Kalish, I., Davydov, A. V., Kanjolia, R. K., & Maslar, J. E. (2017). Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS. Chemistry of materials : a publication of the American Chemical Society, 29(15), 6279-6288. https://doi.org/10.1021/acs.chemmater.7b01367
Kalanyan, Berc, et al. "Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS." Chemistry of materials : a publication of the American Chemical Society vol. 29,15 (2017): 6279-6288. doi: https://doi.org/10.1021/acs.chemmater.7b01367
Kalanyan B, Kimes WA, Beams R, Stranick SJ, Garratt E, Kalish I, Davydov AV, Kanjolia RK, Maslar JE. Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS. Chem Mater. 2017 Aug 08;29(15):6279-6288. doi: 10.1021/acs.chemmater.7b01367. Epub 2017 Jul 12. PMID: 29545674; PMCID: PMC5846631.
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Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure.

Scientific reports

Oveshnikov LN, Kulbachinskii VA, Davydov AB, Aronzon BA, Rozhansky IV, Averkiev NS, Kugel KI, Tripathi V.
PMID: 26596472
Sci Rep. 2015 Nov 24;5:17158. doi: 10.1038/srep17158.

The anomalous Hall effect (AHE) arises from the interplay of spin-orbit interactions and ferromagnetic order and is a potentially useful probe of electron spin polarization, especially in nanoscale systems where direct measurement is not feasible. While AHE is rather...

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Oveshnikov LN, Kulbachinskii VA, Davydov AB, et al. Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure. Sci Rep. 2015;5:17158doi: 10.1038/srep17158.
Oveshnikov, L. N., Kulbachinskii, V. A., Davydov, A. B., Aronzon, B. A., Rozhansky, I. V., Averkiev, N. S., Kugel, K. I., & Tripathi, V. (2015). Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure. Scientific reports, 517158. https://doi.org/10.1038/srep17158
Oveshnikov, L N, et al. "Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure." Scientific reports vol. 5 (2015): 17158. doi: https://doi.org/10.1038/srep17158
Oveshnikov LN, Kulbachinskii VA, Davydov AB, Aronzon BA, Rozhansky IV, Averkiev NS, Kugel KI, Tripathi V. Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure. Sci Rep. 2015 Nov 24;5:17158. doi: 10.1038/srep17158. PMID: 26596472; PMCID: PMC4657011.
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Influence of Substrate Microstructure on the Transport Properties of CVD-Graphene.

ACS applied materials & interfaces

Babichev AV, Rykov SA, Tchernycheva M, Smirnov AN, Davydov VY, Kumzerov YA, Butko VY.
PMID: 26652757
ACS Appl Mater Interfaces. 2016 Jan 13;8(1):240-6. doi: 10.1021/acsami.5b08479. Epub 2015 Dec 24.

We report the study of electrical transport in few-layered CVD-graphene located on nanostructured surfaces in view of its potential application as a transparent contact to optoelectronic devices. Two specific surfaces with a different characteristic feature scale are analyzed: semiconductor...

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Babichev AV, Rykov SA, Tchernycheva M, et al. Influence of Substrate Microstructure on the Transport Properties of CVD-Graphene. ACS Appl Mater Interfaces. 2015;8(1):240-6doi: 10.1021/acsami.5b08479.
Babichev, A. V., Rykov, S. A., Tchernycheva, M., Smirnov, A. N., Davydov, V. Y., Kumzerov, Y. A., & Butko, V. Y. (2016). Influence of Substrate Microstructure on the Transport Properties of CVD-Graphene. ACS applied materials & interfaces, 8(1), 240-6. https://doi.org/10.1021/acsami.5b08479
Babichev, Andrey V, et al. "Influence of Substrate Microstructure on the Transport Properties of CVD-Graphene." ACS applied materials & interfaces vol. 8,1 (2016): 240-6. doi: https://doi.org/10.1021/acsami.5b08479
Babichev AV, Rykov SA, Tchernycheva M, Smirnov AN, Davydov VY, Kumzerov YA, Butko VY. Influence of Substrate Microstructure on the Transport Properties of CVD-Graphene. ACS Appl Mater Interfaces. 2016 Jan 13;8(1):240-6. doi: 10.1021/acsami.5b08479. Epub 2015 Dec 24. PMID: 26652757.
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Retraction: Magnetic carbon.

Nature

Makarova TL, Sundqvist B, Höhne R, Esquinazi P, Kopelevich Y, Scharff P, Davydov V, Kashevarova LS, Rakhmanina AV.
PMID: 16572178
Nature. 2006 Mar 30;440(7084):707. doi: 10.1038/nature04622.

No abstract available.

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Makarova TL, Sundqvist B, Höhne R, et al. Retraction: Magnetic carbon. Nature. 2006;440(7084):707doi: 10.1038/nature04622.
Makarova, T. L., Sundqvist, B., Höhne, R., Esquinazi, P., Kopelevich, Y., Scharff, P., Davydov, V., Kashevarova, L. S., & Rakhmanina, A. V. (2006). Retraction: Magnetic carbon. Nature, 440(7084), 707. https://doi.org/10.1038/nature04622
Makarova, T L, et al. "Retraction: Magnetic carbon." Nature vol. 440,7084 (2006): 707. doi: https://doi.org/10.1038/nature04622
Makarova TL, Sundqvist B, Höhne R, Esquinazi P, Kopelevich Y, Scharff P, Davydov V, Kashevarova LS, Rakhmanina AV. Retraction: Magnetic carbon. Nature. 2006 Mar 30;440(7084):707. doi: 10.1038/nature04622. PMID: 16572178.
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Measurement of the Michel parameter rho in muon decay.

Physical review letters

Musser JR, Bayes R, Davydov YI, Depommier P, Doornbos J, Faszer W, Gagliardi CA, Gaponenko A, Gill DR, Green P, Gumplinger P, Hasinoff MD, Henderson RS, Hu J, Jamieson B, Kitching P, Koetke DD, Krushinsky AA, Lachin YY, Macdonald JA, MacDonald RP, Marshall GM, Mathie EL, Miasoedov LV, Mischke RE, Nord PM, Olchanski K, Olin A, Openshaw R, Porcelli TA, Poutissou JM, Poutissou R, Quraan MA, Rodning NL, Selivanov V, Sheffer G, Shin B, Sobratee F, Stanislaus TD, Tacik R, Torokhov VD, Tribble RE, Vasiliev MA, Wright DH.
PMID: 15783475
Phys Rev Lett. 2005 Mar 18;94(10):101805. doi: 10.1103/PhysRevLett.94.101805. Epub 2005 Mar 18.

The TWIST Collaboration has measured the Michel parameter rho in normal muon decay, mu(+)--> e(+)nu(e)nu (mu). In the standard model, rho = 3/4. Deviations from this value imply mixing of left- and right-handed muon and electron couplings. We find...

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Musser JR, Bayes R, Davydov YI, et al. Measurement of the Michel parameter rho in muon decay. Phys Rev Lett. 2005;94(10):101805doi: 10.1103/PhysRevLett.94.101805.
Musser, J. R., Bayes, R., Davydov, Y. I., Depommier, P., Doornbos, J., Faszer, W., Gagliardi, C. A., Gaponenko, A., Gill, D. R., Green, P., Gumplinger, P., Hasinoff, M. D., Henderson, R. S., Hu, J., Jamieson, B., Kitching, P., Koetke, D. D., Krushinsky, A. A., Lachin, Y. Y., Macdonald, J. A., MacDonald, R. P., Marshall, G. M., Mathie, E. L., Miasoedov, L. V., Mischke, R. E., Nord, P. M., Olchanski, K., Olin, A., Openshaw, R., Porcelli, T. A., Poutissou, J. M., Poutissou, R., Quraan, M. A., Rodning, N. L., Selivanov, V., Sheffer, G., Shin, B., Sobratee, F., Stanislaus, T. D., Tacik, R., Torokhov, V. D., Tribble, R. E., Vasiliev, M. A., Wright, D. H. (2005). Measurement of the Michel parameter rho in muon decay. Physical review letters, 94(10), 101805. https://doi.org/10.1103/PhysRevLett.94.101805
Musser, J R, et al. "Measurement of the Michel parameter rho in muon decay." Physical review letters vol. 94,10 (2005): 101805. doi: https://doi.org/10.1103/PhysRevLett.94.101805
Musser JR, Bayes R, Davydov YI, Depommier P, Doornbos J, Faszer W, Gagliardi CA, Gaponenko A, Gill DR, Green P, Gumplinger P, Hasinoff MD, Henderson RS, Hu J, Jamieson B, Kitching P, Koetke DD, Krushinsky AA, Lachin YY, Macdonald JA, MacDonald RP, Marshall GM, Mathie EL, Miasoedov LV, Mischke RE, Nord PM, Olchanski K, Olin A, Openshaw R, Porcelli TA, Poutissou JM, Poutissou R, Quraan MA, Rodning NL, Selivanov V, Sheffer G, Shin B, Sobratee F, Stanislaus TD, Tacik R, Torokhov VD, Tribble RE, Vasiliev MA, Wright DH. Measurement of the Michel parameter rho in muon decay. Phys Rev Lett. 2005 Mar 18;94(10):101805. doi: 10.1103/PhysRevLett.94.101805. Epub 2005 Mar 18. PMID: 15783475.
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Tapering control of Si nanowires grown from SiCl₄ at reduced pressure.

ACS nano

Krylyuk S, Davydov AV, Levin I.
PMID: 21158417
ACS Nano. 2011 Jan 25;5(1):656-64. doi: 10.1021/nn102556s. Epub 2010 Dec 15.

Device applications of tapered Si nanowire (SiNW) arrays require reliable technological approaches for fabricating nanowires with controlled shape and orientation. In this study, we systematically explore effects of growth conditions on tapering of Si nanowires grown by chemical vapor...

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Krylyuk S, Davydov AV, Levin I. Tapering control of Si nanowires grown from SiCl₄ at reduced pressure. ACS Nano. 2010;5(1):656-64doi: 10.1021/nn102556s.
Krylyuk, S., Davydov, A. V., & Levin, I. (2011). Tapering control of Si nanowires grown from SiCl₄ at reduced pressure. ACS nano, 5(1), 656-64. https://doi.org/10.1021/nn102556s
Krylyuk, Sergiy, et al. "Tapering control of Si nanowires grown from SiCl₄ at reduced pressure." ACS nano vol. 5,1 (2011): 656-64. doi: https://doi.org/10.1021/nn102556s
Krylyuk S, Davydov AV, Levin I. Tapering control of Si nanowires grown from SiCl₄ at reduced pressure. ACS Nano. 2011 Jan 25;5(1):656-64. doi: 10.1021/nn102556s. Epub 2010 Dec 15. PMID: 21158417.
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Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires.

Nanotechnology

Motayed A, Bonevich JE, Krylyuk S, Davydov AV, Aluri G, Rao MV.
PMID: 21233538
Nanotechnology. 2011 Feb 18;22(7):075206. doi: 10.1088/0957-4484/22/7/075206. Epub 2011 Jan 14.

Understanding the electrical and microstructural aspects of contact formation at nanoscale is essential for the realization of low-resistance metallization suitable for the next generation of nanowire based devices. In this study, we present detailed electrical and microstructural characteristics of...

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Motayed A, Bonevich JE, Krylyuk S, et al. Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires. Nanotechnology. 2011;22(7):075206doi: 10.1088/0957-4484/22/7/075206.
Motayed, A., Bonevich, J. E., Krylyuk, S., Davydov, A. V., Aluri, G., & Rao, M. V. (2011). Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires. Nanotechnology, 22(7), 075206. https://doi.org/10.1088/0957-4484/22/7/075206
Motayed, Abhishek, et al. "Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires." Nanotechnology vol. 22,7 (2011): 075206. doi: https://doi.org/10.1088/0957-4484/22/7/075206
Motayed A, Bonevich JE, Krylyuk S, Davydov AV, Aluri G, Rao MV. Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires. Nanotechnology. 2011 Feb 18;22(7):075206. doi: 10.1088/0957-4484/22/7/075206. Epub 2011 Jan 14. PMID: 21233538.
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In situ monitoring of the growth, intermediate phase transformations and templating of single crystal VO2 nanowires and nanoplatelets.

ACS nano

Strelcov E, Davydov AV, Lanke U, Watts C, Kolmakov A.
PMID: 21428376
ACS Nano. 2011 Apr 26;5(4):3373-84. doi: 10.1021/nn2007089. Epub 2011 Mar 29.

Direct in situ optical and photoelectron emission microscopy observations of the nucleation and growth of VO(2) meso- and nanostructures using thermal transport of V(2)O(5) precursor in a vacuum or in an inert-gas environment were conducted. During nanostructure reductive growth,...

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Strelcov E, Davydov AV, Lanke U, et al. In situ monitoring of the growth, intermediate phase transformations and templating of single crystal VO2 nanowires and nanoplatelets. ACS Nano. 2011;5(4):3373-84doi: 10.1021/nn2007089.
Strelcov, E., Davydov, A. V., Lanke, U., Watts, C., & Kolmakov, A. (2011). In situ monitoring of the growth, intermediate phase transformations and templating of single crystal VO2 nanowires and nanoplatelets. ACS nano, 5(4), 3373-84. https://doi.org/10.1021/nn2007089
Strelcov, Evgheni, et al. "In situ monitoring of the growth, intermediate phase transformations and templating of single crystal VO2 nanowires and nanoplatelets." ACS nano vol. 5,4 (2011): 3373-84. doi: https://doi.org/10.1021/nn2007089
Strelcov E, Davydov AV, Lanke U, Watts C, Kolmakov A. In situ monitoring of the growth, intermediate phase transformations and templating of single crystal VO2 nanowires and nanoplatelets. ACS Nano. 2011 Apr 26;5(4):3373-84. doi: 10.1021/nn2007089. Epub 2011 Mar 29. PMID: 21428376.
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On-chip excitation of single germanium vacancies in nanodiamonds embedded in plasmonic waveguides.

Light, science & applications

Siampour H, Kumar S, Davydov VA, Kulikova LF, Agafonov VN, Bozhevolnyi SI.
PMID: 30245809
Light Sci Appl. 2018 Sep 12;7:61. doi: 10.1038/s41377-018-0062-5. eCollection 2018.

Monolithic integration of quantum emitters in nanoscale plasmonic circuitry requires low-loss plasmonic configurations capable of confining light well below the diffraction limit. We demonstrated on-chip remote excitation of nanodiamond-embedded single quantum emitters by plasmonic modes of dielectric ridges atop...

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Siampour H, Kumar S, Davydov VA, et al. On-chip excitation of single germanium vacancies in nanodiamonds embedded in plasmonic waveguides. Light Sci Appl. 2018;7:61doi: 10.1038/s41377-018-0062-5.
Siampour, H., Kumar, S., Davydov, V. A., Kulikova, L. F., Agafonov, V. N., & Bozhevolnyi, S. I. (2018). On-chip excitation of single germanium vacancies in nanodiamonds embedded in plasmonic waveguides. Light, science & applications, 761. https://doi.org/10.1038/s41377-018-0062-5
Siampour, Hamidreza, et al. "On-chip excitation of single germanium vacancies in nanodiamonds embedded in plasmonic waveguides." Light, science & applications vol. 7 (2018): 61. doi: https://doi.org/10.1038/s41377-018-0062-5
Siampour H, Kumar S, Davydov VA, Kulikova LF, Agafonov VN, Bozhevolnyi SI. On-chip excitation of single germanium vacancies in nanodiamonds embedded in plasmonic waveguides. Light Sci Appl. 2018 Sep 12;7:61. doi: 10.1038/s41377-018-0062-5. eCollection 2018. PMID: 30245809; PMCID: PMC6134053.
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Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials.

Science advances

Vaziri S, Yalon E, Muñoz Rojo M, Suryavanshi SV, Zhang H, McClellan CJ, Bailey CS, Smithe KKH, Gabourie AJ, Chen V, Deshmukh S, Bendersky L, Davydov AV, Pop E.
PMID: 31453337
Sci Adv. 2019 Aug 16;5(8):eaax1325. doi: 10.1126/sciadv.aax1325. eCollection 2019 Aug.

Heterogeneous integration of nanomaterials has enabled advanced electronics and photonics applications. However, similar progress has been challenging for thermal applications, in part due to shorter wavelengths of heat carriers (phonons) compared to electrons and photons. Here, we demonstrate unusually...

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Vaziri S, Yalon E, Muñoz Rojo M, et al. Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials. Sci Adv. 2019;5(8):eaax1325doi: 10.1126/sciadv.aax1325.
Vaziri, S., Yalon, E., Muñoz Rojo, M., Suryavanshi, S. V., Zhang, H., McClellan, C. J., Bailey, C. S., Smithe, K. K. H., Gabourie, A. J., Chen, V., Deshmukh, S., Bendersky, L., Davydov, A. V., & Pop, E. (2019). Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials. Science advances, 5(8), eaax1325. https://doi.org/10.1126/sciadv.aax1325
Vaziri, Sam, et al. "Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials." Science advances vol. 5,8 (2019): eaax1325. doi: https://doi.org/10.1126/sciadv.aax1325
Vaziri S, Yalon E, Muñoz Rojo M, Suryavanshi SV, Zhang H, McClellan CJ, Bailey CS, Smithe KKH, Gabourie AJ, Chen V, Deshmukh S, Bendersky L, Davydov AV, Pop E. Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials. Sci Adv. 2019 Aug 16;5(8):eaax1325. doi: 10.1126/sciadv.aax1325. eCollection 2019 Aug. PMID: 31453337; PMCID: PMC6697438.
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